Datasheet > TTC018

TTC018

更新时间： 2024-11-19 14:56:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	298K
描述
NPN Bipolar Transistor, 500 V, 0.1 A, PW-Mini

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TTC018 数据手册

TTC018

Bipolar Transistors Silicon NPN Triple-Diffused Type

TTC018

1. Applications

•

High-Voltage Switching

2. Features

(1) High collector voltage: VCEO = 500 V (min)

(2) High DC current gain: hFE = 100 to 300 (VCE = 10 V, IC = 20 mA)

(3) Low collector-emitter saturation voltage: VCE(sat) = 0.3 V (max) (IC = 20 mA, IB = 2 mA)

3. Packaging and Internal Circuit

1. Base

2. Collector (Heatsink)

3. Emitter

PW-Mini

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current (pulsed)

Base current

VCBO

VCEO

VEBO

500

(Note 1)

100

200

ICP

Collector power dissipation

Junction temperature

Storage temperature

(Note 2)

150

-55 to 150

�

Tstg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Ensure that the junction temperature does not exceed 150 �.

Note 2: Device mounted on a 25.4 mm × 25.4 mm × 1.6 mm FR-4 glass epoxy board (with a dissipating copper surface

of 645 mm2)

Start of commercial production

2019-07

Toshiba Electronic Devices & Storage Corporation

2023-01-16

Rev.2.0

12 3 4 5 6

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