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TTC019 PDF预览

TTC019

更新时间: 2024-11-19 14:56:43
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
7页 338K
描述
NPN Bipolar Transistor, 50 V, 5 A, PW-Mini

TTC019 数据手册

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TTC019  
Bipolar Transistors Silicon NPN Epitaxial Type  
TTC019  
1. Applications  
High-Speed Switching  
DC-DC Converters  
2. Features  
(1) High DC current gain: hFE = 400 to 1000 (VCE = 2 V, IC = 0.5 A)  
(2) Low collector-emitter saturation voltage: VCE(sat) = 0.21 V (max) (IC = 1.6 A, IB = 32 mA)  
(3) High-speed switching: tf = 120 ns (typ.) (IC = 1.6 A)  
3. Packaging and Internal Circuit  
1. Base  
2. Collector (Heatsink)  
3. Emitter  
PW-Mini  
Start of commercial production  
2022-10  
©2022-2023  
Toshiba Electronic Devices & Storage Corporation  
2023-01-18  
Rev.2.0  
1

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