Datasheet > TTC019

TTC019

更新时间： 2024-03-12 21:01:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	338K
描述
NPN Bipolar Transistor, 50 V, 5 A, PW-Mini

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TTC019 数据手册

TTC019

Bipolar Transistors Silicon NPN Epitaxial Type

TTC019

1. Applications

•

High-Speed Switching

•

DC-DC Converters

2. Features

(1) High DC current gain: hFE = 400 to 1000 (VCE = 2 V, IC = 0.5 A)

(2) Low collector-emitter saturation voltage: VCE(sat) = 0.21 V (max) (IC = 1.6 A, IB = 32 mA)

(3) High-speed switching: tf = 120 ns (typ.) (IC = 1.6 A)

3. Packaging and Internal Circuit

1. Base

2. Collector (Heatsink)

3. Emitter

PW-Mini

Start of commercial production

2022-10

Toshiba Electronic Devices & Storage Corporation

2023-01-18

Rev.2.0

12 3 4 5 6 7

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