Datasheet > TTC014

TTC014

更新时间： 2023-12-20 18:45:31

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	175K
描述
NPN Bipolar Transistor, 800 V, 1 A, New PW-Mold

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TTC014 数据手册

TTC014

Bipolar Transistors Silicon NPN Triple-Diffused Type

TTC014

1. Applications

•

High-Speed High-Voltage Switching

Switching Voltage Regulators

High-Speed DC-DC Converters

2. Features

(1) High DC current gain

: hFE = 100 to 200 (IC = 0.1 A)

(2) High collector breakdown voltage : VCEO = 800 V, VCBO = 900 V

(3) High-speed switching

: tr = 0.2 µs (typ.), tf = 0.4 µs (typ.) (IC = 0.3 A)

3. Packaging and Internal Circuit

1. Base

2. Collector (Heatsink)

3. Emitter

New PW-Mold

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current (pulsed)

Base current

VCBO

VCES

VCEO

VEBO

900

800

(Note 1)

ICP

0.5

Collector power dissipation

Junction temperature

Storage temperature

(Ta = 25 )

(Tc = 25 )

150



Tstg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Ensure that the junction temperature does not exceed 150 .

Start of commercial production

2013-06

2014-03-10

Rev.2.0

12 3 4 5 6

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