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TTC014 PDF预览

TTC014

更新时间: 2023-12-20 18:45:31
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 175K
描述
NPN Bipolar Transistor, 800 V, 1 A, New PW-Mold

TTC014 数据手册

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TTC014  
Bipolar Transistors Silicon NPN Triple-Diffused Type  
TTC014  
1. Applications  
High-Speed High-Voltage Switching  
Switching Voltage Regulators  
High-Speed DC-DC Converters  
2. Features  
(1) High DC current gain  
: hFE = 100 to 200 (IC = 0.1 A)  
(2) High collector breakdown voltage : VCEO = 800 V, VCBO = 900 V  
(3) High-speed switching  
: tr = 0.2 µs (typ.), tf = 0.4 µs (typ.) (IC = 0.3 A)  
3. Packaging and Internal Circuit  
1. Base  
2. Collector (Heatsink)  
3. Emitter  
New PW-Mold  
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )  
Characteristics  
Symbol  
Rating  
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current (DC)  
Collector current (pulsed)  
Base current  
VCBO  
VCES  
VCEO  
VEBO  
IC  
900  
900  
800  
8
(Note 1)  
(Note 1)  
1
A
ICP  
2
IB  
0.5  
Collector power dissipation  
Collector power dissipation  
Junction temperature  
Storage temperature  
(Ta = 25 )  
(Tc = 25 )  
PC  
1
40  
W
Tj  
150  
Tstg  
-55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Ensure that the junction temperature does not exceed 150 .  
Start of commercial production  
2013-06  
2014-03-10  
Rev.2.0  
1

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