Datasheet > TTC017

TTC017

更新时间： 2024-11-19 14:57:59

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	492K
描述
NPN Bipolar Transistor, 80 V, 3 A, New PW-Mold

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TTC017 数据手册

TTC017

Bipolar Transistors Silicon NPN Epitaxial Type

TTC017

1. Applications

•

Power Amplifiers

•

Power Switching

2. Features

(1) High DC current gain

: hFE = 180 to 450 (IC = 0.5 A)

(2) Low collector saturation voltage : VCE(sat) = 0.5 V (max) (IC = 1 A)

(3) High-speed switching

: tstg = 400 ns (typ.) (IC = 1 A)

3. Packaging and Internal Circuit

1. Base

2. Collector (Heatsink)

3. Emitter

New PW-Mold

Start of commercial production

2015-03

2015-03-24

Rev.1.0

12 3 4 5 6 7

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