Datasheet > TTC016

TTC016

更新时间： 2024-09-24 14:56:19

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	316K
描述
NPN Bipolar Transistor, 50 V, 5 A, New PW-Mold

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技术参数
数据手册

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TTC016 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.77
Base Number Matches：	1

TTC016 数据手册

TTC016

Bipolar Transistors Silicon NPN Epitaxial Type

TTC016

1. Applications

•

High-Speed Switching

•

DC-DC Converters

2. Features

(1) High DC current gain

: hFE = 400 to 1000 (IC = 0.5 A)

(2) Low collector saturation voltage : VCE(sat) = 0.22 V (max) (IC = 1.6 A, IB = 32 mA)

(3) High-speed switching

: tf = 95 ns (typ.)

3. Packaging and Internal Circuit

1. Base

2. Collector (Heatsink)

3. Emitter

New PW-Mold

4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current (pulsed)

Base current

VCBO

VCEX

VCEO

VEBO

120

100

(Note 1)

ICP

0.5

Collector power dissipation

Junction temperature

Storage temperature

(Ta = 25 )

(Tc = 25 )

1.2

(Note 2)

175

-55 to 150



Tstg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Ensure that the junction temperature does not exceed 175 .

Note 2: The definitions of the absolute maximum junction and storage temperatures are based on AEC-Q101.

Start of commercial production

2014-12

2015-03-05

Rev.1.0

12 3 4 5 6

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