Datasheet > TTC011B

TTC011B

更新时间： 2023-12-20 18:45:32

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	276K
描述
NPN Bipolar Transistor, 230 V, 1 A, TO-126N

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TTC011B 数据手册

TTC011B

Bipolar Transistors Silicon NPN Epitaxial Type

TTC011B

1. Applications

•

Power Amplifiers

•

Audio-Frequency Amplifiers

2. Features

(1) High collector voltage

: VCEO = 230 V (min)

(2) Small collector output capacitance : Cob = 20 pF (typ.)

(3) High transition frequency

(4) Complementary to TTA006B

: fT = 100 MHz (typ.)

3. Packaging and Internal Circuit (Note)

1. Emitter

2. Collector

3. Base

TO-126N

Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation

voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical

isolation from surrounding parts.

4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current (pulsed)

Base current

VCBO

VCEO

VEBO

230

(Note 1)

ICP

0.5

Collector power dissipation

Junction temperature

Storage temperature

1.5

(Tc = 25 )

150



Tstg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e.

reliability test report and estimated failure rate, etc).

Note 1: Ensure that the junction temperature does not exceed 150 .

Start of commercial production

2014-04

2016-02-09

Rev.1.0

12 3 4 5 6

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