5秒后页面跳转
TSAL7600_09 PDF预览

TSAL7600_09

更新时间: 2024-09-14 08:35:27
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
5页 111K
描述
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

TSAL7600_09 数据手册

 浏览型号TSAL7600_09的Datasheet PDF文件第2页浏览型号TSAL7600_09的Datasheet PDF文件第3页浏览型号TSAL7600_09的Datasheet PDF文件第4页浏览型号TSAL7600_09的Datasheet PDF文件第5页 
TSAL7600  
Vishay Semiconductors  
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs  
FEATURES  
• Package type: leaded  
• Package form: T-1¾  
• Dimensions (in mm): 5  
• Peak wavelength: λp = 940 nm  
• High reliability  
• High radiant power  
• High radiant intensity  
• Angle of half intensity: ϕ = ꢀ0ꢁ  
94 889  
• Low forward voltage  
• Suitable for high pulse current operation  
• Good spectral matching with Si photodetectors  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
DESCRIPTION  
TSAL7600 is an infrared, 940 nm emitting diode in  
GaAlAs/GaAs technology with high radiant power molded in  
a clear, untinted plastic package.  
• Halogen-free according to IEC 61249-2-21 definition  
APPLICATIONS  
• Infrared remote control units with high power requirements  
• Free air transmission systems  
• Infrared source for optical counters and card readers  
PRODUCT SUMMARY  
COMPONENT  
Ie (mW/sr)  
ϕ (deg)  
λ
P (nm)  
tr (ns)  
TSAL7600  
25  
ꢀ0  
940  
800  
Note  
Test conditions see table “Basic Characteristics”  
ORDERING INFORMATION  
ORDERING CODE  
PACKAGING  
Bulk  
REMARKS  
PACKAGE FORM  
TSAL7600  
MOQ: 4000 pcs, 4000 pcs/bulk  
T-1¾  
Note  
MOQ: minimum order quantity  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
5
UNIT  
V
Reverse voltage  
VR  
IF  
Forward current  
100  
200  
1.5  
mA  
mA  
A
Peak forward current  
Surge forward current  
Power dissipation  
tp/T = 0.5, tp = 100 µs  
tp = 100 µs  
IFM  
IFSM  
PV  
Tj  
160  
100  
mW  
ꢁC  
Junction temperature  
Operating temperature range  
Storage temperature range  
Soldering temperature  
Tamb  
Tstg  
Tsd  
- 40 to + 85  
- 40 to + 100  
260  
ꢁC  
ꢁC  
t 5 s, 2 mm from case  
ꢁC  
J-STD-051, leads 7 mm soldered  
on PCB  
Thermal resistance junction/ambient  
RthJA  
2ꢀ0  
K/W  
Note  
amb = 25 ꢁC, unless otherwise specified  
T
Document Number: 81015  
Rev. 1.8, 29-Jun-09  
For technical questions, contact: emittertechsupport@vishay.com  
www.vishay.com  
1

与TSAL7600_09相关器件

型号 品牌 获取价格 描述 数据表
TSAL7600-MSZ VISHAY

获取价格

Infrared LED, LAMP,IRED,940NM PEAK WAVELENGTH,LED-2B
TSA-XX ADAM-TECH

获取价格

TSB RCD

获取价格

Tantalum Chip Capacitors
TSB10 ETC

获取价格

EURO TERMINAL BLOCKS
TSB100 SURGE

获取价格

Trans Voltage Suppressor Diode, 600W, Unidirectional, 1 Element, Silicon, DO-214AA,
TSB100A SURGE

获取价格

Trans Voltage Suppressor Diode, 600W, Unidirectional, 1 Element, Silicon, DO-214AA,
TSB100C SURGE

获取价格

Trans Voltage Suppressor Diode, 600W, Bidirectional, 1 Element, Silicon, DO-214AA,
TSB10A SURGE

获取价格

Trans Voltage Suppressor Diode, 600W, Unidirectional, 1 Element, Silicon, DO-214AA,
TSB10C SURGE

获取价格

Trans Voltage Suppressor Diode, 600W, Bidirectional, 1 Element, Silicon, DO-214AA,
TSB11 ETC

获取价格

EURO TERMINAL BLOCKS