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TSAL7600-MSZ PDF预览

TSAL7600-MSZ

更新时间: 2024-11-27 13:14:55
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
5页 111K
描述
Infrared LED, LAMP,IRED,940NM PEAK WAVELENGTH,LED-2B

TSAL7600-MSZ 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.84最大正向电流:0.1 A
最大正向电压:1.6 V安装特点:THROUGH HOLE MOUNT
最高工作温度:100 °C最低工作温度:-55 °C
光电设备类型:INFRARED LED峰值波长:940 nm
最大反向电压:5 V半导体材料:GaAs/GaAIAs
光谱带宽:5e-8 m子类别:Infrared LEDs
表面贴装:NO视角:60 deg
Base Number Matches:1

TSAL7600-MSZ 数据手册

 浏览型号TSAL7600-MSZ的Datasheet PDF文件第2页浏览型号TSAL7600-MSZ的Datasheet PDF文件第3页浏览型号TSAL7600-MSZ的Datasheet PDF文件第4页浏览型号TSAL7600-MSZ的Datasheet PDF文件第5页 
TSAL7600  
Vishay Semiconductors  
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs  
FEATURES  
• Package type: leaded  
• Package form: T-1¾  
• Dimensions (in mm): 5  
• Peak wavelength: λp = 940 nm  
• High reliability  
• High radiant power  
• High radiant intensity  
• Angle of half intensity: ϕ = ꢀ0ꢁ  
94 889  
• Low forward voltage  
• Suitable for high pulse current operation  
• Good spectral matching with Si photodetectors  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
DESCRIPTION  
TSAL7600 is an infrared, 940 nm emitting diode in  
GaAlAs/GaAs technology with high radiant power molded in  
a clear, untinted plastic package.  
• Halogen-free according to IEC 61249-2-21 definition  
APPLICATIONS  
• Infrared remote control units with high power requirements  
• Free air transmission systems  
• Infrared source for optical counters and card readers  
PRODUCT SUMMARY  
COMPONENT  
Ie (mW/sr)  
ϕ (deg)  
λ
P (nm)  
tr (ns)  
TSAL7600  
25  
ꢀ0  
940  
800  
Note  
Test conditions see table “Basic Characteristics”  
ORDERING INFORMATION  
ORDERING CODE  
PACKAGING  
Bulk  
REMARKS  
PACKAGE FORM  
TSAL7600  
MOQ: 4000 pcs, 4000 pcs/bulk  
T-1¾  
Note  
MOQ: minimum order quantity  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
5
UNIT  
V
Reverse voltage  
VR  
IF  
Forward current  
100  
200  
1.5  
mA  
mA  
A
Peak forward current  
Surge forward current  
Power dissipation  
tp/T = 0.5, tp = 100 µs  
tp = 100 µs  
IFM  
IFSM  
PV  
Tj  
160  
100  
mW  
ꢁC  
Junction temperature  
Operating temperature range  
Storage temperature range  
Soldering temperature  
Tamb  
Tstg  
Tsd  
- 40 to + 85  
- 40 to + 100  
260  
ꢁC  
ꢁC  
t 5 s, 2 mm from case  
ꢁC  
J-STD-051, leads 7 mm soldered  
on PCB  
Thermal resistance junction/ambient  
RthJA  
2ꢀ0  
K/W  
Note  
amb = 25 ꢁC, unless otherwise specified  
T
Document Number: 81015  
Rev. 1.8, 29-Jun-09  
For technical questions, contact: emittertechsupport@vishay.com  
www.vishay.com  
1

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