Datasheet > TSB1132_1

TSB1132_1

更新时间： 2024-11-09 05:55:15

品牌	Logo	应用领域
TSC		晶体晶体管
页数	文件大小	规格书
4页	196K
描述
Low Vcesat PNP Transistor

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中文翻译

获取价格

数据手册

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TSB1132_1 数据手册

TSB1132

Low Vcesat PNP Transistor

SOT-89

PRODUCT SUMMARY

Pin Definition:

1. Base

2. Collector

3. Emitter

BV_CBO

BV_CEO

I_C

-40V

-32V

-1A

V_CE(SAT)

-0.15V @ I_C/ I_B= -0.5A / -50mA

Features

Ordering Information

●

Low V_CE(SAT)-0.15 @ I_C/ I_B= --.5A / -50mA (Typ.)

Excellent DC current gain characteristics

Part No.

Package

SOT-89

Packing

●

TSB1132CY RM

1Kpcs / 7” Reel

Structure

●

Epitaxial Planar Type

PNP Silicon Transistor

●

Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)

Parameter

Symbol

Limit

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CBO

V_CEO

V_EBO

-40

-32

-5

-1

Collector Current

I_C

Pulse

-2.5 (note1)

0.6

Collector Power Dissipation

P_D

2 (note 2)

+150

Operating Junction Temperature

T_J

^oC

Operating Junction and Storage Temperature Range

Note: 1. Single pulse, Pw=10ms, Duty≤50%

T_STG

- 55 to +150

2. When mounted on a 40 x 40 x 0.7mm ceramic board.

Electrical Specifications (Ta = 25^oC unless otherwise noted)

Parameter

Conditions

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Min

Typ

Max

Unit

Collector-Base Breakdown Voltage

I_C= -50uA, I_E= 0

-40

-32

-5

Collector-Emitter Breakdown Voltage I_C= -1mA, I_B= 0

Emitter-Base Breakdown Voltage

Collector Cutoff Current

I_E= -50uA, I_C= 0

V_CB= -20V, I_E= 0

V_EB= -4V, I_C= 0

-0.5

390

Emitter Cutoff Current

I_EBO

Collector-Emitter Saturation Voltage

DC Current Transfer Ratio

I_C/ I_B= -0.5A / -50mA

V_CE= -3V, I_C= 100mA

V_CE=-5V, I_C=-50mA,

f=100MHz

V_CE(SAT)

h_FE

-0.15

Transition Frequency

Output Capacitance

f_T

150

MHz

V_CB= -10V, f=1MHz

Cob

hFE values are classified as follows:

Rank

hFE

120~270

180~390

1/1

Version: A08

12 3 4

中文翻译

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