Datasheet > TSB1184A_1

TSB1184A_1

更新时间： 2024-11-27 05:55:15

品牌	Logo	应用领域
TSC		晶体晶体管
页数	文件大小	规格书
4页	313K
描述
Low Vcesat PNP Transistor

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中文翻译

获取价格

数据手册

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TSB1184A_1 数据手册

TSB1184A

Low Vcesat PNP Transistor

TO-252

(DPAK)

Pin Definition:

1. Base

2. Collector

3. Emitter

PRODUCT SUMMARY

BV_CBO

BV_CEO

I_C

-50V

-3A

V_CE(SAT)

-0.3V @ I_C/ I_B= -2A / -100mA

Features

Ordering Information

●

Low V_CE(SAT)-0.3V @ I_C/ I_B= -2A / -100mA (Typ.)

Excellent DC current gain characteristics

Part No.

Package

TO-252

Packing

●

TSB1184ACP RO

2.5Kpcs / 13” Reel

Structure

●

Epitaxial Planar Type

PNP Silicon Transistor

●

Absolute Maximum Rating (Ta = 25^oC unless otherwise noted)

Parameter

Symbol

Limit

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CBO

V_CEO

V_EBO

-50

-6

-3

-7 (note)

Collector Current

I_C

Pulse

Ta=25ºC

Tc=25ºC

Collector Power Dissipation

P_D

Operating Junction Temperature

T_J

+150

^oC

Operating Junction and Storage Temperature Range

Note: Single pulse, Pw=10ms

T_STG

- 55 to +150

Electrical Specifications (Ta = 25^oC unless otherwise noted)

Parameter

Conditions

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Min

Typ

Max

Unit

Collector-Base Breakdown Voltage

I_C= -50uA, I_E= 0

-50

-6

Collector-Emitter Breakdown Voltage I_C= -1mA, I_B= 0

Emitter-Base Breakdown Voltage

Collector Cutoff Current

I_E= -50uA, I_C= 0

V_CB= -40V, I_E= 0

V_EB= -4V, I_C= 0

-1

Emitter Cutoff Current

I_EBO

-1

Collector-Emitter Saturation Voltage

DC Current Transfer Ratio

I_C/ I_B= -2A / -200mA

V_CE= -2V, I_C= -100mA

V_CE=-5V, I_C=-100mA,

f=30MHz

*V_CE(SAT)

*h_FE

-0.3

-0.5

560

120

Transition Frequency

f_T

MHz

Output Capacitance

V_CB= -10V, f=1MHz

Cob

* Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2%

1/4

Version: A08

12 3 4

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