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TSB1184A_1 PDF预览

TSB1184A_1

更新时间: 2024-09-15 05:55:15
品牌 Logo 应用领域
TSC 晶体晶体管
页数 文件大小 规格书
4页 313K
描述
Low Vcesat PNP Transistor

TSB1184A_1 数据手册

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TSB1184A  
Low Vcesat PNP Transistor  
TO-252  
(DPAK)  
Pin Definition:  
1. Base  
2. Collector  
3. Emitter  
PRODUCT SUMMARY  
BVCBO  
BVCEO  
IC  
-50V  
-50V  
-3A  
VCE(SAT)  
-0.3V @ IC / IB = -2A / -100mA  
Features  
Ordering Information  
Low VCE(SAT) -0.3V @ IC / IB = -2A / -100mA (Typ.)  
Excellent DC current gain characteristics  
Part No.  
Package  
TO-252  
Packing  
TSB1184ACP RO  
2.5Kpcs / 13” Reel  
Structure  
Epitaxial Planar Type  
PNP Silicon Transistor  
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)  
Parameter  
Symbol  
Limit  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCBO  
VCEO  
VEBO  
-50  
-50  
V
-6  
V
DC  
-3  
-7 (note)  
1
Collector Current  
IC  
A
Pulse  
Ta=25ºC  
Tc=25ºC  
Collector Power Dissipation  
PD  
W
5
Operating Junction Temperature  
TJ  
+150  
oC  
oC  
Operating Junction and Storage Temperature Range  
Note: Single pulse, Pw=10ms  
TSTG  
- 55 to +150  
Electrical Specifications (Ta = 25oC unless otherwise noted)  
Parameter  
Conditions  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Min  
Typ  
--  
Max  
--  
Unit  
Collector-Base Breakdown Voltage  
IC = -50uA, IE = 0  
-50  
-50  
-6  
V
V
Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0  
--  
--  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
IE = -50uA, IC = 0  
VCB = -40V, IE = 0  
VEB = -4V, IC = 0  
--  
--  
V
--  
--  
-1  
uA  
uA  
V
Emitter Cutoff Current  
IEBO  
--  
--  
-1  
Collector-Emitter Saturation Voltage  
DC Current Transfer Ratio  
IC / IB = -2A / -200mA  
VCE = -2V, IC = -100mA  
VCE =-5V, IC=-100mA,  
f=30MHz  
*VCE(SAT)  
*hFE  
--  
-0.3  
--  
-0.5  
560  
120  
Transition Frequency  
fT  
--  
--  
80  
55  
--  
--  
MHz  
pF  
Output Capacitance  
VCB = -10V, f=1MHz  
Cob  
* Pulse Test: Pulse Width 380uS, Duty Cycle2%  
1/4  
Version: A08  

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