Datasheet > TSB1184CPQ

TSB1184CPQ

更新时间： 2024-11-04 22:19:07

品牌	Logo	应用领域
TSC		晶体晶体管
页数	文件大小	规格书
3页	46K
描述
Low Vce(sat) PNP Transistor

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中文翻译

获取价格

技术参数
数据手册

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TSB1184CPQ 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

TSB1184CPQ 数据手册

TSB1184

Low Vce(sat) PNP Transistor

Pin Assignment:

1. Base

2. Collector

3. Emitter

BV_CEO= - 50V

Ic = - 3A

V_{CE (SAT)}, = - 0.3V(typ.) @Ic / Ib = - 2A / - 0.1A

Features

Ordering Information

ꢀ

Low V_{CE (SAT).}

Part No.

Packing

Package

ꢀ

Excellent DC current gain characteristics

TSB1184CP

Tape & Reel

TO-252

Structure

ꢀ

Epitaxial planar type.

ꢀ

PNP silicon transistor

Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)

Parameter

Symbol

Limit

- 50V

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

V_CBO

V_CEO

V_EBO

I_C

- 50V

- 6

- 3

Pulse

TO-252

- 7 (note 1)

1.0

Collector Power Dissipation

P_D

T_J

^oC

Operating Junction Temperature

+150

Operating Junction and Storage Temperature Range

Note: 1. Single pulse, Pw = 2mS

T_STG

- 55 to +150

Electrical Characteristics

Ta = 25 ^oC unless otherwise noted

Parameter

Static

Conditions

Symbol

Min

Typ

Max

Unit

Collector-Base Voltage

I_C= - 50uA, I_E= 0

I_C= - 1mA, I_B= 0

I_E= - 50uA, I_C= 0

V_CB= - 40V, I_E= 0

V_EB= - 4V, I_C= 0

BV_CBO

BV_CEO

BV_EBO

I_CBO

- 50

- 6

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

- 1

- 0.5

560

Emitter Cutoff Current

I_EBO

Collector-Emitter Saturation Voltage

DC Current Transfer Ratio

Transition Frequency

I_C/ I_B= - 2.0A / - 0.2A

V_CE= - 2V, I_C= - 1A

V_CE= - 5V, I_C= - 100mA,

f = 100MHz

V_CE(SAT)

h_FE

- 0.3

120

f_T

MHz

Output Capacitance

V_CB= - 10V, f=1MHz

Cob

Note : pulse test: pulse width <=380uS, duty cycle <=2%

Classification Of h_FE

Rank

Range

120 - 270

180 - 390

270 - 560

TSB1184

1-1

2003/12 rev. B

12 3

中文翻译

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