Datasheet > TSB1132

TSB1132

更新时间： 2024-09-14 22:19:07

品牌	Logo	应用领域
TSC		晶体晶体管
页数	文件大小	规格书
3页	45K
描述
Low Frequency PNP Transistor

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中文翻译

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数据手册

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TSB1132 数据手册

TSB1132

Low Frequency PNP Transistor

BV_CEO= - 32V

Ic = - 1A

Pin assignment:

1. Base

V_{CE (SAT)}, =- 0.15V(typ.) @Ic / Ib =- 0.5A /- 50mA

2. Collector

3. Emitter

Features

Ordering Information

ꢀ

Low V_{CE (SAT).}

Part No.

Packing

Package

Marking

ꢀ

Excellent DC current gain characteristics

TSB1132CY

Tape & Reel

SOT-89

Structure

ꢀ

Epitaxial planar type.

ꢀ

PNP silicon transistor

Absolute Maximum Rating (Ta = 25 ^oC unless otherwise noted)

Parameter

Symbol

Limit

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

V_CBO

V_CEO

V_EBO

I_C

- 40V

- 32V

- 5

- 1

Pulse

SOT-89

- 2.5 (note 1)

0.6

Collector Power Dissipation

P_D

2 (note 2)

+150

Operating Junction Temperature

T_J

^oC

Operating Junction and Storage Temperature Range

T_STG

- 55 to +150

Note: 1. Single pulse, Pw = 10mS, Duty <= 50%

2. When mounted on a 40 x 40 x 0.7mm ceramic board

Electrical Characteristics

Ta = 25 ^oC unless otherwise noted

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Collector-Base Voltage

I_C= - 50uA, I_E= 0

I_C= - 1mA, I_B= 0

BV_CBO

BV_CEO

BV_EBO

I_CBO

- 40

- 32

- 5

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

I_E= - 50uA, I_C= 0

V_CB= - 20V, I_E= 0

V_EB= - 4V, I_C= 0

- 0.5

-0.5

- 0.5

390

Emitter Cutoff Current

I_EBO

Collector-Emitter Saturation Voltage

DC Current Transfer Ratio

Transition Frequency

I_C/ I_B= - 500mA / - 50mA

V_CE= - 3V, I_C= - 0.1A

V_CE= - 5V, I_C= - 50mA,

f = 100MHz

V_CE(SAT)

h_FE

- 0.15

150

f_T

MHz

Output Capacitance

V_CB= - 10V, f=1MHz

Cob

Note : pulse test: pulse width <=380uS, duty cycle <=2%

Classification Of h_FE

Rank

Range

82 - 180

120 - 270

180 - 390

TSB1132

1-1

2003/12 rev. B

12 3

中文翻译

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