Datasheet > TPCS8004_09

TPCS8004_09

更新时间： 2024-02-29 18:33:31

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器开关
页数	文件大小	规格书
7页	205K
描述
High-Speed Switching Applications Switching Regulator Applications DC-DC Converter Applications

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TPCS8004_09 数据手册

TPCS8004

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)

TPCS8004

High-Speed Switching Applications

Unit: mm

Switching Regulator Applications

DC-DC Converter Applications

•

Small footprint due to small and thin package

Low drain-source ON resistance: R = 0.56 Ω (typ.)

DS (ON)

High forward transfer admittance: |Y | = 1.8 S (typ.)

Low leakage current: I

= 100 μA (max) (V

= 200 V)

DSS

Enhancement model: V = 1.5 to 3.5 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

200

±20

1.3

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

JEDEC

JEITA

―

(Note 1)

Drain current

Pulse (Note 1)

5.2

Drain power dissipation (t = 10 s)

(Note 2a)

TOSHIBA

2-3R1B

1.5

0.6

Weight: 0.035 g (typ.)

Drain power dissipation (t = 10 s)

(Note 2b)

Single pulse avalanche energy(Note3)

Avalanche current

1.05

1.3

Circuit Configuration

Repetitive avalanche energy

(Note2a, Note 4)

0.15

Channel temperature

150

°C

Storage temperature range

−55 to 150

stg

Note 1, Note 2, Note 3 and Note 4: See the next page.

This transistor is an electrostatic-sensitive device. Please handle with caution.

2009-09-29

12 3 4 5 6 7

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