Datasheet > TPC8.2HM3/87A

TPC8.2HM3/87A

更新时间： 2024-11-02 22:50:43

品牌	Logo	应用领域
威世 - VISHAY		电视
页数	文件大小	规格书
5页	106K
描述
TVS DIODE 6.63V 12.5V TO277A

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中文翻译

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数据手册

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TPC8.2HM3/87A 数据手册

TPC6.8A thru TPC51A

Vishay General Semiconductor

www.vishay.com

Surface Mount PAR^®Transient Voltage Suppressors

Uni-directional 1500 W TVS in SMPC (TO-277) Package

FEATURES

eSMP^®Series

Available

• Junction

passivation

optimized

design

passivated anisotropic rectifier technology

• T_J= 185 °C capability suitable for high reliability

and automotive requirement

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Uni-direction only

• Excellent clamping capability

• Low incremental surge resistance

• Very fast response time

SMPC (TO-277A)

Cathode 1

Cathode 2

• Meets MSL level 1, per J-STD-020

• AEC-Q101 qualified

Anode

click logo to get started

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESIGN SUPPORT TOOLS

Models

TYPICAL APPLICATIONS

Available

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, automotive, and telecommunication.

PRIMARY CHARACTERISTICS

V_WM

5.8 V to 43.6 V

V_BR

6.8 V to 51 V

1500 W

MECHANICAL DATA

P_PPM

Case: SMPC (TO-277A)

T_Jmax.

Polarity

Package

185 °C

Molding compound meets UL 94 V-0 flammability rating

Base P/NHM3_X - halogen-free, RoHS-compliant, and

AEC-Q101 qualified (“X” denotes revision code e.g. A, B, ...)

Uni-directional

SMPC (TO-277A)

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

HM3 suffix meets JESD 201 class 2 whisker test

MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

I_PPM

VALUE

1500

UNIT

Peak power dissipation with a 10/1000 μs waveform (fig. 3) ⁽¹⁾⁽²⁾

Peak power pulse current with a 10/1000 μs waveform (fig. 1) ⁽¹⁾

Peak forward surge current 8.3 ms single half sine-wave ⁽²⁾

Maximum instantaneous forward voltage at 100 A ⁽³⁾

Operating junction and storage temperature range

See next table

200

I_FSM

V_F

3.5

T_J, T_STG

-65 to +185

°C

Notes

(1)

(2)

(3)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2

Measured on 8.3 ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum

Pulse test: 300 μs pulse width, 1 % duty cycle

Revision: 07-Dec-2018

Document Number: 89056

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与TPC8.2HM3/87A相关器件

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TPC8001	TOSHIBA	获取价格	Silicon N Channel MOS Type (MOSVI)
TPC8002	TOSHIBA	获取价格	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSVI)
TPC-800-24S	TOPPOWER	获取价格	792W wide input AC/DC switching power supply
TPC8003	TOSHIBA	获取价格	Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
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TPC-800-36S	TOPPOWER	获取价格	792W wide input AC/DC switching power supply
TPC8004	TOSHIBA	获取价格	Silicon N Channel MOS Type (MOSVI)
TPC-800-48S	TOPPOWER	获取价格	792W wide input AC/DC switching power supply
TPC8005-H	TOSHIBA	获取价格	Silicon N Channel MOS Type (High Speed U−MOS)
TPC8006-H	TOSHIBA	获取价格	FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE

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