生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
针数: | 8 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.81 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 157 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 11 A | 最大漏极电流 (ID): | 11 A |
最大漏源导通电阻: | 0.022 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | 元件数量: | 1 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 2.4 W |
最大功率耗散 (Abs): | 2.4 W | 最大脉冲漏极电流 (IDM): | 44 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TPC-800-24S | TOPPOWER |
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792W wide input AC/DC switching power supply | |
TPC8003 | TOSHIBA |
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Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) | |
TPC8003(TE12L) | TOSHIBA |
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TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,13A I(D),SO | |
TPC-800-36S | TOPPOWER |
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792W wide input AC/DC switching power supply | |
TPC8004 | TOSHIBA |
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Silicon N Channel MOS Type (MOSVI) | |
TPC-800-48S | TOPPOWER |
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792W wide input AC/DC switching power supply | |
TPC8005-H | TOSHIBA |
获取价格 |
Silicon N Channel MOS Type (High Speed U−MOS) | |
TPC8006-H | TOSHIBA |
获取价格 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE | |
TPC8007-H | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 13A I(D) | SO | |
TPC8009-H | TOSHIBA |
获取价格 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII) |