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TPC8002 PDF预览

TPC8002

更新时间: 2024-02-05 16:02:48
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
7页 516K
描述
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSVI)

TPC8002 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.81
Is Samacsys:N雪崩能效等级(Eas):157 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):11 A最大漏极电流 (ID):11 A
最大漏源导通电阻:0.022 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL功耗环境最大值:2.4 W
最大功率耗散 (Abs):2.4 W最大脉冲漏极电流 (IDM):44 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

TPC8002 数据手册

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TPC8002  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI)  
TPC8002  
Lithium Ion Battery Applications  
Unit: mm  
Portable Equipment Applications  
Notebook PC Applications  
Small footprint due to small and thin package  
Low drainsource ON resistance : R  
= 11.5 m(typ.)  
DS (ON)  
High forward transfer admittance : |Y | = 15 S (typ.)  
fs  
= 10 µA (max) (V  
Low leakage current : I  
= 30 V)  
DSS  
DS  
Enhancementmode : V = 0.8~2.0 V (V  
= 10 V, I = 1 mA)  
th  
DS  
D
Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
30  
30  
V
V
V
DSS  
V
Drain-gate voltage (R  
Gate-source voltage  
= 20 k)  
DGR  
GS  
V
±20  
11  
GSS  
DC  
(Note 1)  
I
D
Drain current  
A
JEDEC  
JEITA  
Pulse (Note 1)  
I
44  
DP  
Drain power dissipation  
Drain power dissipation  
(t = 10 s)  
(Note 2a)  
P
2.4  
1.0  
W
W
D
D
TOSHIBA  
2-6J1B  
(t = 10 s)  
(Note 2b)  
P
Weight: 0.080 g (typ.)  
Single pulse avalanche energy  
(Note 3)  
E
I
157  
11  
mJ  
A
AS  
Avalanche current  
AR  
Circuit Configuration  
Repetitive avalanche energy  
E
0.24  
mJ  
AR  
(Note 2a) (Note 4)  
T
150  
°C  
°C  
Channel temperature  
ch  
T
55 to 150  
Storage temperature range  
stg  
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the  
next page.  
This transistor is an electrostatic sensitive device. Please handle with  
caution.  
1
2002-02-06  

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