Datasheet > TPC8003(TE12L)

TPC8003(TE12L)

更新时间： 2024-01-24 01:46:36

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	313K
描述
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,13A I(D),SO

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中文翻译

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技术参数
数据手册

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TPC8003(TE12L) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.74
配置：	Single	最大漏极电流 (Abs) (ID)：	13 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	2.4 W	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

TPC8003(TE12L) 数据手册

TPC8003

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)

TPC8003

Lithium Ion Battery Applications

Portable Equipment Applications

Notebook PC Applications

Unit: mm

l Small footprint due to small and thin package

l Low drain−source ON resistance : R

= 5.4 mΩ (typ.)

DS (ON)

l High forward transfer admittance : |Y | = 21 S (typ.)

= 10 µA (max) (V

l Low leakage current : I

= 30 V)

DSS

l Enhancement−mode : V = 0.8~2.5 V (V

= 10 V, I = 1 mA)

Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

±20

GSS

(Note 1)

Drain current

Pulse (Note 1)

JEDEC

JEITA

―

Drain power dissipation

(t = 10 s)

(Note 2a)

2.4

1.0

(t = 10 s)

(Note 2b)

TOSHIBA

2-6J1B

Weight: 0.080 g (typ.)

Single pulse avalanche energy

(Note 3)

220

Avalanche current

Circuit Configuration

Repetitive avalanche energy

0.24

(Note 2a) (Note 4)

150

°C

Channel temperature

−55 to 150

Storage temperature range

stg

Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the

next page.

This transistor is an electrostatic sensitive device. Please handle with

caution.

2002-02-06

12 3 4 5 6 7

中文翻译

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