TIP35AG

更新时间： 2024-12-01 08:48:39

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	81K
描述
Complementary Silicon High?Power Transistors

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

TIP35AG 数据手册

TIP35A, TIP35B, TIP35C

(NPN); TIP36A, TIP36B,

TIP36C (PNP)

TIP35B, TIP35C, TIP36B, and TIP36C are Preferred Devices

Complementary Silicon

High−Power Transistors

http://onsemi.com

Designed for general−purpose power amplifier and switching

applications.

25 AMPERE

Features

COMPLEMENTARY SILICON

POWER TRANSISTORS

60−100 VOLTS, 125 WATTS

• 25 A Collector Current

• Low Leakage Current −

= 1.0 mA @ 30 and 60 V

CEO

• Excellent DC Gain −

= 40 Typ @ 15 A

• High Current Gain Bandwidth Product −

⎪h ⎪= 3.0 min @ I

= 1.0 A, f = 1.0 MHz

• Pb−Free Packages are Available*

SOT−93 (TO−218)

CASE 340D

STYLE 1

MAXIMUM RATINGS

TIP35A TIP35B TIP35C

TIP36A TIP36B TIP36C

Rating

Symbol

Unit

Vdc

Adc

Collector − Emitter Voltage

Collector − Base Voltage

Emitter − Base Voltage

Collector Current

100

CEO

5.0

MARKING DIAGRAM

− Continuous

− Peak (Note 1)

Base Current − Continuous

Total Power Dissipation

5.0

Adc

125

AYWWG

TIP3xx

@ T = 25_C

Derate above 25_C

W/_C

Operating and Storage

Junction Temperature Range

T , T

−65 to +150

stg

Unclamped Inductive Load

THERMAL CHARACTERISTICS

= Assembly Location

= Year

Characteristic

Symbol

Max

Unit

= Work Week

Thermal Resistance,

Junction−to−Case

1.0

°C/W

TIP3xx = Device Code

= 5A, 5B, 5C

6A, 6B, 6C

= Pb−Free Package

Junction−To−Free−Air

Thermal Resistance

35.7

°C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

1. Pulse Test: Pulse Width = 10 ms, Duty Cycle v 10%.

Preferred devices are recommended choices for future use

and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

September, 2005 − Rev. 5

TIP35A/D

12 3 4 5 6

中文翻译

下载PDF

TIP35AG 替代型号

型号	品牌	替代类型	描述	数据表
TIP35A	ONSEMI	功能相似	COMPLEMENTARY SILICON POWER TRANSISTORS

与TIP35AG相关器件

型号	品牌	获取价格	描述	数据表
TIP35B	CENTRAL	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS
TIP35B	BOURNS	获取价格	NPN SILICON POWER TRANSISTORS
TIP35B	FREESCALE	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS
TIP35B	ONSEMI	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS
TIP35B	MOSPEC	获取价格	POWER TRANSISTORS(25A,40-100V,125W)
TIP35B	COMSET	获取价格	SILICON POWER TRANSISTORS
TIP35B	MOTOROLA	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS
TIP35B	SAVANTIC	获取价格	Silicon NPN Power Transistors
TIP35B	ISC	获取价格	Silicon NPN Power Transistors
TIP35B	NJSEMI	获取价格	Trans GP BJT NPN 80V 40A 3-Pin(3+Tab) TO-218 Box

与TIP35AG相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

53
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

42
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

70
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

66

产品中心

服务支持

精选活动

关于我们

帮助中心

TIP35AG

TIP35AG 数据手册

TIP35AG 替代型号

与TIP35AG相关器件

与TIP35AG相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

TIP35AG

TIP35AG 数据手册

TIP35AG 替代型号

与TIP35AG相关器件

与TIP35AG相关文章

您还可以找

您在本页遇到什么问题？