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TIP35C PDF预览

TIP35C

更新时间: 2024-11-29 03:59:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管放大器局域网高功率电源
页数 文件大小 规格书
4页 46K
描述
COMPLEMENTARY SILICON HIGH POWER TRANSISTORS

TIP35C 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:8 weeks风险等级:0.82
最大集电极电流 (IC):25 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):10
JEDEC-95代码:TO-218JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN功耗环境最大值:125 W
最大功率耗散 (Abs):125 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzVCEsat-Max:4 V
Base Number Matches:1

TIP35C 数据手册

 浏览型号TIP35C的Datasheet PDF文件第2页浏览型号TIP35C的Datasheet PDF文件第3页浏览型号TIP35C的Datasheet PDF文件第4页 
TIP35C  
TIP36B/TIP36C  
®
COMPLEMENTARY SILICON HIGH POWER  
TRANSISTORS  
STMicroelectronic PREFERRED  
SALESTYPES  
DESCRIPTION  
The TIP35C is a silicon Epitaxial-Base NPN  
transistor mounted in TO-218 plastic package. It  
is intented for use in power amplifier and  
switching applications.  
The complementary PNP type is TIP36C.  
Also TIP36B is a PNP type.  
3
2
1
TO-218  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
NPN  
PNP  
TIP35C  
TIP36C  
100  
TIP36B  
80  
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
V
V
80  
100  
5
V
25  
A
ICM  
IB  
Collector Peak Current  
Base Current  
50  
5
A
A
o
Ptot  
Tstg  
Tj  
125  
W
oC  
oC  
Total Dissipation at Tcase 25 C  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
For PNP types voltage and current values are negative.  
1/4  
September 2003  

TIP35C 替代型号

型号 品牌 替代类型 描述 数据表
TIP35CW STMICROELECTRONICS

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