Datasheet > TIP35C TO-247

TIP35C TO-247

更新时间： 2024-04-09 19:03:24

品牌	Logo	应用领域
CENTRAL		/
页数	文件大小	规格书
3页	254K
描述
100V,25A,125W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

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TIP35C TO-247 数据手册

TIP35C

www.centralsemi.com

SILICON

NPN POWER TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR TIP35C in the

TO-247 case is a silicon NPN power transistor

manufactured by the epitaxial base process, designed

for high current amplifier and switching applications.

MARKING: FULL PART NUMBER

TO-247 CASE

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

100

CBO

CEO

EBO

Collector-Emitter Voltage

Emitter-Base Voltage

5.0

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Power Dissipation

5.0

125

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

1.0

°C

°C/W

stg

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=60V

1.0

CEO

CES

EBO

=100V

=5.0V

0.7

1.0

I =30mA

100

CEO

CE(SAT)

BE(ON)

I =15A, I =1.5A

1.8

4.0

2.0

4.5

I =25A, I =5.0A

=4.0V, I =15A

=4.0V, I =25A

=4.0V, I =1.5A

3.0

=4.0V, I =15A

100

=10V, I =1.0A, f=1.0kHz

=10V, I =1.0A, f=1.0MHz

MHz

R1 (20-April 2017)

12 3

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