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TIP35B PDF预览

TIP35B

更新时间: 2024-11-04 07:04:31
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
6页 161K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

TIP35B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.68
外壳连接:COLLECTOR最大集电极电流 (IC):25 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):15JEDEC-95代码:TO-218AC
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
功耗环境最大值:125 W最大功率耗散 (Abs):125 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):3 MHz
VCEsat-Max:4 VBase Number Matches:1

TIP35B 数据手册

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Order this document  
by TIP35A/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . for general–purpose power amplifier and switching applications.  
25 A Collector Current  
Low Leakage Current — I  
Excellent DC Gain — h  
High Current Gain Bandwidth Product —  
f = 1.0 MHz  
= 1.0 mA @ 30 and 60 V  
CEO  
= 40 Typ @ 15 A  
FE  
h = 3.0 min @ I = 1.0 A,  
fe C  
MAXIMUM RATINGS  
TIP35A TIP35B TIP35C  
TIP36A TIP36B TIP36C  
*Motorola Preferred Device  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
25 AMPERE  
COMPLEMENTARY  
SILICON  
POWER TRANSISTORS  
60100 VOLTS  
125 WATTS  
V
CEO  
60 V  
60 V  
80 V  
80 V  
5.0  
100 V  
100 V  
V
CB  
V
EB  
Collector Current — Continuous  
Peak (1)  
I
C
25  
40  
Base Current — Continuous  
Total Power Dissipation  
I
5.0  
Adc  
B
P
D
@ T = 25 C  
125  
1.0  
Watts  
W/ C  
C
Derate above 25 C  
Operating and Storage Junction  
Temperature Range  
T , T  
J stg  
65 to +150  
C
Unclamped Inductive Load  
E
SB  
90  
mJ  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
C/W  
C/W  
CASE 340D–02  
TO–218AC  
Thermal Resistance, Junction to Case  
R
R
1.0  
θJC  
Junction–To–Free–Air Thermal Resistance  
35.7  
θJA  
(1) Pulse Test: Pulse Width = 10 ms, Duty Cycle  
10%.  
125  
100  
75  
50  
25  
0
0
25  
50  
75  
125  
C)  
150  
175  
100  
T
, CASE TEMPERATURE (  
°
C
Figure 1. Power Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1996

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