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TIP35C PDF预览

TIP35C

更新时间: 2024-12-01 07:04:31
品牌 Logo 应用领域
SAVANTIC 晶体晶体管放大器局域网
页数 文件大小 规格书
4页 170K
描述
Silicon NPN Power Transistors

TIP35C 数据手册

 浏览型号TIP35C的Datasheet PDF文件第2页浏览型号TIP35C的Datasheet PDF文件第3页浏览型号TIP35C的Datasheet PDF文件第4页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
TIP35/35A/35B/35C  
DESCRIPTION  
·With TO-3PN package  
·Complement to type TIP36/36A/36B/36C  
·DC current gain hFE=25(Min)@IC=1.5A  
APPLICATIONS  
·Designed for use in general purpose  
power amplifier and switching applications.  
PINNING  
PIN  
DESCRIPTION  
1
Base  
Collector;connected to  
mounting base  
2
Fig.1 simplified outline (TO-3PN) and symbol  
3
Emitter  
ABSOLUTE MAXIMUM RATINGS (TC=ꢀ )  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
40  
UNIT  
TIP35  
TIP35A  
TIP35B  
TIP35C  
TIP35  
60  
VCBO  
Collector-base voltage  
Open emitter  
V
80  
100  
40  
TIP35A  
TIP35B  
TIP35C  
60  
VCEO  
Collector-emitter voltage  
Open base  
V
80  
100  
5
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
V
A
A
A
W
25  
Collector current-peak  
Base current  
40  
5
PC  
Tj  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
125  
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Rth j-c  
Thermal resistance junction to case  
1.0  
/W  

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