TIP35B

更新时间： 2024-11-04 08:48:39

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	265K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

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中文翻译

获取价格

数据手册

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TIP35B 数据手册

TIP35 TIP35A TIP35B TIP35C NPN

TIP36 TIP36A TIP36B TIP36C PNP

Central

Semiconductor Corp.

COMPLEMENTARY SILICON

POWER TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR TIP35, TIP36

Series types are Complementary Silicon Power

Transistors manufactured by the epitaxial base

process, designed for high current amplifier and

switching applications.

MARKING: FULL PART NUMBER

TO-218 TRANSISTOR CASE

TIP35 TIP35A TIP35B TIP35C

MAXIMUM RATINGS: (T =25°C)

SYMBOL TIP36 TIP36A TIP36B TIP36C UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

100

CBO

CEO

EBO

100

5.0

Continuous Collector Current

Peak Collector Current

Base Current

5.0

125

Power Dissipation

°C

°C/W

Operating and Storage Junction Temperature

Thermal Resistance

T , T

stg

-65 to +150

1.0

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

=30V, (TIP35, TIP35A, TIP36, TIP36A)

=60V, (TIP35B, TIP35C, TIP36B, TIP36C)

1.0

CEO

CES

EBO

1.0

0.7

1.0

=Rated V

=5.0V

CEO

I =30mA (TIP35, TIP36)

CEO

I =30mA (TIP35A, TIP36A)

I =30mA (TIP35B, TIP36B)

CEO

I =30mA (TIP35C, TIP36C)

100

CEO

I =15A, I =1.5A

1.8

4.0

2.0

4.5

CE(SAT)

BE(ON)

I =25A, I =5.0A

=4.0V, I =15A

=4.0V, I =25A

=4.0V, I =1.5A

3.0

=4.0V, I =15A

100

=10V, I =1.0A, f=1.0kHz

=10V, I =1.0A, f=1.0MHz

MHz

R1 (29-October 2008)

中文翻译

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