Datasheet > TIP35B

TIP35B

更新时间： 2024-11-04 08:48:39

品牌	Logo	应用领域
伯恩斯 - BOURNS		晶体晶体管
页数	文件大小	规格书
6页	97K
描述
NPN SILICON POWER TRANSISTORS

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TIP35B 数据手册

TIP35, TIP35A, TIP35B, TIP35C

NPN SILICON POWER TRANSISTORS

JULY 1968 - REVISED MARCH 1997

●

Designed for Complementary Use with the

TIP36 Series

SOT-93 PACKAGE

(TOP VIEW)

●

125 W at 25°C Case Temperature

25 A Continuous Collector Current

40 A Peak Collector Current

Customer-Specified Selections Available

Pin 2 is in electrical contact with the mounting base.

MDTRAA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

TIP35

TIP35A

TIP35B

TIP35C

TIP35

100

Collector-base voltage (I_E= 0)

Collector-emitter voltage (I_B= 0)

V_CBO

120

140

TIP35A

TIP35B

TIP35C

V_CEO

100

Emitter-base voltage

V_EBO

I_C

I_CM

I_B

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

125

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)

Unclamped inductive load energy (see Note 4)

P_tot

°C

3.5

½LI_C

Operating junction temperature range

T_j

T_stg

T_L

-65 to +150

250

Storage temperature range

Lead temperature 3.2 mm from case for 10 seconds

NOTES: 1. This value applies for t_p£ 0.3 ms, duty cycle £ 10%.

2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I_B(on)= 0.4 A, R_BE= 100 W,

V_BE(off)= 0, R_S= 0.1 W, V_CC= 20 V.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6

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