Datasheet > TIP35B

TIP35B

更新时间： 2024-12-01 07:04:31

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
4页	170K
描述
Silicon NPN Power Transistors

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TIP35B 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

TIP35/35A/35B/35C

DESCRIPTION

·With TO-3PN package

·Complement to type TIP36/36A/36B/36C

·DC current gain h_FE=25(Min)@I_C=1.5A

APPLICATIONS

·Designed for use in general purpose

power amplifier and switching applications.

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PN) and symbol

Emitter

ABSOLUTE MAXIMUM RATINGS (T_C=ꢀ )

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

TIP35

TIP35A

TIP35B

TIP35C

TIP35

V_CBO

Collector-base voltage

Open emitter

100

TIP35A

TIP35B

TIP35C

V_CEO

Collector-emitter voltage

Open base

100

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current

Open collector

ꢀ

Collector current-peak

Base current

P_C

T_j

Collector power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

125

150

-65~150

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal resistance junction to case

1.0

ꢀ/W

12 3 4

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