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TIP35A PDF预览

TIP35A

更新时间: 2024-09-23 08:48:39
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 265K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

TIP35A 数据手册

 浏览型号TIP35A的Datasheet PDF文件第2页 
TM  
TIP35 TIP35A TIP35B TIP35C NPN  
TIP36 TIP36A TIP36B TIP36C PNP  
Central  
Semiconductor Corp.  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR TIP35, TIP36  
Series types are Complementary Silicon Power  
Transistors manufactured by the epitaxial base  
process, designed for high current amplifier and  
switching applications.  
MARKING: FULL PART NUMBER  
TO-218 TRANSISTOR CASE  
TIP35 TIP35A TIP35B TIP35C  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL TIP36 TIP36A TIP36B TIP36C UNITS  
C
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
40  
60  
80  
100  
V
CBO  
CEO  
EBO  
40  
60  
80  
100  
V
5.0  
25  
V
Continuous Collector Current  
Peak Collector Current  
Base Current  
I
A
C
I
40  
A
CM  
I
5.0  
125  
A
B
Power Dissipation  
P
W
°C  
°C/W  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
stg  
-65 to +150  
1.0  
J
Θ
JC  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
I
V
V
V
V
=30V, (TIP35, TIP35A, TIP36, TIP36A)  
=60V, (TIP35B, TIP35C, TIP36B, TIP36C)  
1.0  
mA  
CEO  
CEO  
CES  
EBO  
CE  
CE  
CE  
EB  
1.0  
0.7  
1.0  
mA  
mA  
mA  
V
=Rated V  
=5.0V  
CEO  
BV  
BV  
BV  
BV  
I =30mA (TIP35, TIP36)  
40  
60  
CEO  
CEO  
C
I =30mA (TIP35A, TIP36A)  
V
C
I =30mA (TIP35B, TIP36B)  
80  
V
CEO  
C
I =30mA (TIP35C, TIP36C)  
100  
V
CEO  
C
V
V
V
V
I =15A, I =1.5A  
1.8  
4.0  
2.0  
4.5  
V
CE(SAT)  
CE(SAT)  
BE(ON)  
BE(ON)  
FE  
C
B
I =25A, I =5.0A  
V
C
B
V
=4.0V, I =15A  
V
CE  
CE  
CE  
CE  
CE  
CE  
C
V
V
V
V
V
=4.0V, I =25A  
V
C
h
h
h
=4.0V, I =1.5A  
25  
10  
25  
3.0  
C
=4.0V, I =15A  
100  
FE  
C
=10V, I =1.0A, f=1.0kHz  
fe  
C
f
=10V, I =1.0A, f=1.0MHz  
MHz  
T
C
R1 (29-October 2008)  

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