Datasheet > TGF2060

TGF2060

更新时间： 2024-11-08 01:10:51

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
8页	410K
描述
600 um Discrete GaAs pHEMT

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TGF2060 数据手册

TGF2060

600 um Discrete GaAs pHEMT

Applications

• Defense & Aerospace

• High-Reliability

• Test and Measurement

• Commercial

• Broadband Wireless

Product Features

Functional Block Diagram

Drain

• Frequency Range: DC - 20 GHz

• 28 dBm Typical Output Power - P1dB

• 12 dB Typical Gain at 12 GHz

• 55% Typical PAE at 12 GHz

• 1.4 dB Typical NF at12 GHz

• No Vias

Gate

• Technology: 0.25 um GaAs pHEMT

• Chip Dimensions: 0.41 x 0.34 x 0.10 mm

Source

General Description

Pad Configuration

The TriQuint TGF2060 is a discrete 600 micron pHEMT

which operates from DC to 20 GHz. The TGF2060 is

fabricated using TriQuint’s proven standard 0.25 um

power pHEMT production process. This process

features advanced techniques to optimize microwave

power and efficiency at high drain bias operating

conditions.

Pad Dimensions Terminals

G (71um X 71um)

D (71um X 71um)

S (121um X 71um)

Gate

Drain

Source

The TGF2060 typically provides 28 dBm of output power

at P1dB with gain of 12 dB and 55% power-added

efficiency at 1 dB compression. This performance

makes the TGF2060 appropriate for high efficiency

applications. The protective overcoat layer with silicon

nitride provides a level of environmental robustness and

scratch protection.

The TGF2060 is lead-free and RoHS compliant.

Ordering Information

Part

TGF2060

ECCN

EAR99

Description

600 um GaAs pHEMT

Datasheet: Rev. C 11-04-13

Disclaimer: Subject to change without notice

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