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TGF2953_15 PDF预览

TGF2953_15

更新时间: 2024-09-18 01:18:59
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TRIQUINT /
页数 文件大小 规格书
21页 1721K
描述
12 Watt Discrete Power GaN on SiC HEMT

TGF2953_15 数据手册

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TGF2953  
12 Watt Discrete Power GaN on SiC HEMT  
Applications  
Marine radar  
Satellite communications  
Point to point communications  
Military communications  
Broadband amplifiers  
High efficiency amplifiers  
Product Features  
Functional Block Diagram  
Frequency Range: DC - 12 GHz  
41.2 dBm Nominal PSAT at 3.5 GHz  
73.7% Maximum PAE at 3.5 GHz  
18.2 dB Nominal Power Gain at 3.5 GHz  
Bias: VD = 32 V, IDQ = 50 mA  
Technology: TQGaN25 on SiC  
Chip Dimensions: 1.01 x 1.14 x 0.10 mm  
General Description  
Pad Configuration  
The TriQuint TGF2953 is a discrete 2.52 mm GaN on  
SiC HEMT which operates from DC-12 GHz. The  
TGF2953 is designed using TriQuint’s proven TQGaN25  
production process. This process features advanced  
field plate techniques to optimize microwave power and  
efficiency at high drain bias operating conditions.  
Pad No.  
1-2  
Symbol  
VG / RF IN  
3
VD / RF OUT  
Source / Ground  
Backside  
The TGF2953 typically provides 41.2 dBm of saturated  
output power with power gain of 18.2 dB at 3.5 GHz.  
The maximum power added efficiency is 73.7 % which  
makes the TGF2953 appropriate for high efficiency  
applications.  
Ordering Information  
Part ECCN  
Description  
12 Watt GaN HEMT  
Lead-free and RoHS compliant.  
TGF2953  
EAR99  
Datasheet: Rev A 10-22-14  
Disclaimer: Subject to change without notice  
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© 2014 TriQuint  
www.triquint.com  

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