Datasheet > TGF2977-SMEVBP01

TGF2977-SMEVBP01

更新时间： 2024-11-10 02:52:43

品牌	Logo	应用领域
威讯联合 - QORVO		/
页数	文件大小	规格书
28页	2254K
描述
DC â 12 GHz, 32 V, 5 W GaN RF Transistor

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TGF2977-SMEVBP01 数据手册

TGF2977-SM

DC – 12 GHz, 32 V, 5 W GaN RF Transistor

Product Overview

The Qorvo TGF2977-SM is a 5 W (P_3dB) discrete GaN on SiC

HEMT which operates from DC to 12 GHz and 32 V supply.

The device is in an industry standard overmolded package

and is ideally suited for avionics, military, marine and

weather radar. The device can support pulsed and linear

operations.

Lead-free and ROHS compliant.

Evaluation boards are available upon request.

3 x 3mm Package

Key Features

• Frequency: DC to 12 GHz

• Output Power (P_3dB)¹: 4.8 W

• Linear Gain¹: 13 dB

Functional Block Diagram

• Typical PAE_3dB¹: 50%

N/C

• Operating Voltage: 32 V

• CW and Pulse capable

Note 1: @ 9 GHz Load Pull

N/C

12 N/C

V_G, RF IN

V_D, RF OUT

Applications

V_G, RF IN

V_D, RF OUT

N/C

• Military radar

N/C

• Commercial radar

Avionics

Marine

Weather

N/C

Ordering info

Part No.

TGF2977-SM

ECCN Description

QFN Packaged Part

EAR99

TGF2977-

SMEVBP01

EAR99

9 – 10 GHz EVB

TGF2977-

SMEVBP02

EAR99

2.6 – 4.2 GHz EVB

Datasheet Rev. B, July 25, 2017 | Subject to change without notice

www.qorvo.com

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