Datasheet > TGF3021-SM-EVB1

TGF3021-SM-EVB1

更新时间： 2024-09-19 01:10:47

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
33页	2656K
描述
30W, 32V, 0.03 â 4 GHz, GaN RF Transistor

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TGF3021-SM-EVB1 数据手册

TGF3021-SM

30W, 32V, 0.03 – 4 GHz, GaN RF Transistor

Applications

• Military radar

• Civilian radar

• Land mobile and military radio communications

• Test instrumentation

• Wideband and narrowband amplifiers

• Jammers

Functional Block Diagram

Product Features

• Frequency: 0.03 to 4.0 GHz

• Output Power (P_3dB): 36.0 W at 2 GHz

• Linear Gain: 19.3 dB at 2 GHz

• Typical PAE_3dB: 72.7% at 2 GHz

• Operating Voltage: 32 V

• Low thermal resistance package

• CW and Pulse capable

• 3 x 4 mm package

General Description

Pin Configuration

The TriQuint TGF3021-SM is a 30 W (P_3dB) discrete GaN

on SiC HEMT which operates from 0.03 to 4.0 GHz. The

device is constructed with TriQuint’s proven TQGaN25

process, which features advanced field plate techniques

to optimize power and efficiency at high drain bias

operating conditions. This optimization can potentially

lower system costs in terms of fewer amplifier line-ups

and lower thermal management costs.

Pin No.

11 - 16

1 - 6

Label

V_D/ RF OUT

V_G/ RF IN

7 – 10, 20 - 17

Back side

Source

The device is housed in an industry-standard 3 x 4 mm

surface mount QFN package.

Ordering Information

Lead-free and ROHS compliant

Part

ECCN

Description

Evaluation boards are available upon request.

TGF3021-SM

EAR99

QFN Packaged Part

TGF3021-SM-

EVB1

0.03 – 0.512 GHz

EVB

EAR99

Datasheet: Rev A 2-27-15

Disclaimer: Subject to change without notice

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