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TGF4230 PDF预览

TGF4230

更新时间: 2024-09-17 22:19:47
品牌 Logo 应用领域
TRIQUINT /
页数 文件大小 规格书
7页 182K
描述
1.2mm Discrete HFET

TGF4230 数据手册

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T R I Q U I N T  
S E M I C O N D U C T O R ,  
I N C .  
TGF4230-EEU  
1.2mm Discrete HFET  
4230  
1200 µm X 0.5 µm HFET  
Nominal Pout of 28.5-dBm at 8.5-GHz  
Nominal Gain of 10.0-dB at 8.5-GHz  
Nominal PAE of 55% at 8.5-GHz  
Suitable for High-Reliability Applications  
0,572 x 0,699 x 0,102 mm (0.023 x 0.028 x 0.004 in.)  
PHOTO ENLARGEMENT  
The Triquint TGF4230 -EEU is a single gate 1.2 mm Discrete GaAs Heterostructure Field  
Effect Transistor (HFET) designed for high-efficiency power applications up to 1 2- GHz in Class A and  
Class AB operation.  
DESCRIPTION  
Bond-pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods  
as well as thermocompression and thermosonic wire-bonding processes. The TGF4230-EEU is  
readily assembled using automatic equipment.  
TriQuint Semiconductor, Inc.  
Texas Facilities  
(972) 995-8465  
• www.triquint.com  

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