Datasheet > TGF3020-SMEVBP01

TGF3020-SMEVBP01

更新时间： 2024-11-08 02:52:55

品牌	Logo	应用领域
威讯联合 - QORVO		/
页数	文件大小	规格书
24页	2208K
描述
4 â 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor

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TGF3020-SMEVBP01 数据手册

TGF3020-SM

4 – 6 GHz, 32 V, 5 W GaN RF Input-Matched Transistor

Product Overview

The Qorvo TGF3020-SM is a 5W (P_3dB), 50 input matched

discrete GaN on SiC HEMT which operates from 4.0 to 6.0

GHz. The integrated input matching network enables

wideband gain and power performance, while the output can

be matched on board to optimize power and efficiency for

any region within the band.

The device is housed in an industry-standard 3 x 3 mm

surface mount QFN package.

3 x 3mm QFN package

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Key Features

• Frequency: 4 to 6 GHz

• Output Power (P_3dB)¹: 6.8 W

• Linear Gain¹: 13 dB

Functional Block Diagram

• Typical PAE_3dB¹: 60%

• Operating Voltage: 32 V

• CW and Pulse capable

Note 1: @ 5 GHz Load Pull

Input

Matching

Applications

• Telemetry

• C-band radar

• Communications

• Test instrumentation

• Wideband amplifiers

• 5.8GHz ISM

Ordering info

Part No. ECCN

TGF3020-SM EAR99

Description

QFN Packaged Part

TGF3020-

EAR99

5.3 – 5.9 GHz EVB

4 – 6 GHz EVB

SMEVBP01

TGF3020-

SMEVBP02

EAR99

Datasheet Rev. B, October 24, 2017 | Subject to change without notice

www.qorvo.com

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