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TGF2957_15 PDF预览

TGF2957_15

更新时间: 2024-11-10 01:18:59
品牌 Logo 应用领域
TRIQUINT /
页数 文件大小 规格书
19页 1434K
描述
70 Watt Discrete Power GaN on SiC HEMT

TGF2957_15 数据手册

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TGF2957  
70 Watt Discrete Power GaN on SiC HEMT  
Applications  
Defense & Aerospace  
Broadband Wireless  
Product Features  
Functional Block Diagram  
Frequency Range: DC - 12 GHz  
48.6 dBm Nominal PSAT at 3 GHz  
69.6% Maximum PAE at 3 GHz  
19.2 dB Nominal Power Gain at 3 GHz  
Bias: VD = 32 V, IDQ = 250 mA  
Technology: TQGaN25 on SiC  
Chip Dimensions: 1.01 x 3.66 x 0.10 mm  
General Description  
Pad Configuration  
The TriQuint TGF2957 is a discrete 12.6 mm GaN on  
SiC HEMT which operates from DC-12 GHz. The  
TGF2957 is designed using TriQuint’s proven TQGaN25  
production process. This process features advanced  
field plate techniques to optimize microwave power and  
efficiency at high drain bias operating conditions.  
Pad No.  
1-10  
Symbol  
VG / RF IN  
11-15  
VD / RF OUT  
Source / Ground  
Backside  
The TGF2957 typically provides 48.6 dBm of saturated  
output power with power gain of 19.2 dB at 3 GHz. The  
maximum power added efficiency is 69.6 % which makes  
the TGF2957 appropriate for high efficiency applications.  
Ordering Information  
Part ECCN  
TGF2957  
Lead-free and RoHS compliant.  
Description  
3A001b.3.b 70 Watt GaN HEMT  
Datasheet: Rev A 10-20-14  
Disclaimer: Subject to change without notice  
- 1 of 19 -  
© 2014 TriQuint  
www.triquint.com  

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