Datasheet > TGF2965-SM

TGF2965-SM

更新时间： 2024-11-10 01:18:35

品牌	Logo	应用领域
TRIQUINT		高功率电源射频微波
页数	文件大小	规格书
23页	2478K
描述
5W, 32V, 0.03 â 3 GHz, GaN RF Input-Matched Transistor

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TGF2965-SM 数据手册

TGF2965-SM

5W, 32V, 0.03 – 3 GHz, GaN RF Input-Matched Transistor

Applications

• Military radar

• Civilian radar

• Land mobile and military radio communications

• Test instrumentation

• Wideband and narrowband amplifiers

• Jammers

Functional Block Diagram

Product Features

• Frequency: 0.03 to 3.0 GHz

• Output Power (P_3dB): 6.0 W at 2 GHz

• Linear Gain: 18 dB at 2 GHz

• Typical PAE_3dB: 63% at 2 GHz

• Operating Voltage: 32 V

• Low thermal resistance package

• CW and Pulse capable

• 3 x 3 mm package

General Description

Pin Configuration

Pin No.

10 - 11

Label

V_D/ RF OUT

The TriQuint TGF2965-SM is a 6W (P_3dB), 50Ω-input

matched discrete GaN on SiC HEMT which operates from

0.03 to 3.0 GHz. The integrated input matching network

enables wideband gain and power performance, while the

output can be matched on board to optimize power and

efficiency for any region within the band.

V_G/ RF IN

Off-chip shunt cap for low

frequency gain

Source

Back side

The device is housed in an industry-standard 3 x 3 mm

surface mount QFN package.

Lead-free and ROHS compliant

Ordering Information

Evaluation boards are available upon request.

Part

ECCN

Description

TGF2965-SM

EAR99

QFN Packaged Part

TGF2965-SM-

EVB1

EAR99

0.03 – 3.0 GHz EVB

Datasheet: Rev A 12-11-14

Disclaimer: Subject to change without notice

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