Datasheet > TGF2956

TGF2956

更新时间： 2024-09-18 01:18:59

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TRIQUINT		/
页数	文件大小	规格书
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描述
55 Watt Discrete Power GaN on SiC HEMT

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TGF2956 数据手册

TGF2956

55 Watt Discrete Power GaN on SiC HEMT

Applications

• Defense & Aerospace

• Broadband Wireless

Product Features

Functional Block Diagram

• Frequency Range: DC - 12 GHz

• 47.6 dBm Nominal P_SATat 3 GHz

• 69.7% Maximum PAE at 3 GHz

• 19.3 dB Nominal Power Gain at 3 GHz

• Bias: V_D= 32 V, I_DQ= 200 mA

• Technology: TQGaN25 on SiC

• Chip Dimensions: 1.01 x 2.88 x 0.10 mm

General Description

Pad Configuration

The TriQuint TGF2956 is a discrete 10.08 mm GaN on

SiC HEMT which operates from DC-12 GHz. The

TGF2956 is designed using TriQuint’s proven TQGaN25

production process. This process features advanced

field plate techniques to optimize microwave power and

efficiency at high drain bias operating conditions.

Pad No.

1-8

Symbol

V_G/ RF IN

9-12

V_D/ RF OUT

Source / Ground

Backside

The TGF2956 typically provides 47.6 dBm of saturated

output power with power gain of 19.3 dB at 3 GHz. The

maximum power added efficiency is 69.7 % which makes

the TGF2956 appropriate for high efficiency applications.

Ordering Information

Part ECCN

TGF2956

Lead-free and RoHS compliant.

Description

3A001b.3.b 55 Watt GaN HEMT

Datasheet: Rev A 10-20-14

Disclaimer: Subject to change without notice

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与TGF2956相关器件

型号	品牌	获取价格	描述	数据表
TGF2956_15	TRIQUINT	获取价格	55 Watt Discrete Power GaN on SiC HEMT
TGF2957	TRIQUINT	获取价格	70 Watt Discrete Power GaN on SiC HEMT
TGF2957_15	TRIQUINT	获取价格	70 Watt Discrete Power GaN on SiC HEMT
TGF2960-SD	TRIQUINT	获取价格	0.5 Watt DC-5 GHz Packaged HFET
TGF2961-SD	TRIQUINT	获取价格	1 Watt DC-4 GHz Packaged HFET
TGF2965-SM	TRIQUINT	获取价格	5W, 32V, 0.03 â 3 GHz, GaN RF Input-Matched
TGF2965-SM_15	TRIQUINT	获取价格	5W, 32V, 0.03 â 3 GHz, GaN RF Input-Matched
TGF2977-SM	QORVO	获取价格	DC â 12 GHz, 32 V, 5 W GaN RF Transistor
TGF2977-SMEVBP01	QORVO	获取价格	DC â 12 GHz, 32 V, 5 W GaN RF Transistor
TGF2977-SMEVBP02	QORVO	获取价格	DC â 12 GHz, 32 V, 5 W GaN RF Transistor