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TGF2954 PDF预览

TGF2954

更新时间: 2024-09-18 01:18:59
品牌 Logo 应用领域
TRIQUINT /
页数 文件大小 规格书
19页 1674K
描述
27 Watt Discrete Power GaN on SiC HEMT

TGF2954 数据手册

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TGF2954  
27 Watt Discrete Power GaN on SiC HEMT  
Applications  
Marine radar  
Satellite communications  
Point to point communications  
Military communications  
Broadband amplifiers  
High efficiency amplifiers  
Product Features  
Functional Block Diagram  
Frequency Range: DC - 12 GHz  
44.5 dBm Nominal PSAT at 3 GHz  
71.6% Maximum PAE at 3 GHz  
19.6 dB Nominal Power Gain at 3 GHz  
Bias: VD = 32 V, IDQ = 100 mA  
5-6  
1-4  
Technology: TQGaN25 on SiC  
Chip Dimensions: 1.01 x 1.68 x 0.10 mm  
GND  
General Description  
Pad Configuration  
The TriQuint TGF2954 is a discrete 5.04 mm GaN on  
SiC HEMT which operates from DC-12 GHz. The  
TGF2954 is designed using TriQuint’s proven TQGaN25  
production process. This process features advanced  
field plate techniques to optimize microwave power and  
efficiency at high drain bias operating conditions.  
Pad No.  
1-4  
Symbol  
VG / RF IN  
5-6  
VD / RF OUT  
Source / Ground  
Backside  
The TGF2954 typically provides 44.5 dBm of saturated  
output power with power gain of 19.5 dB at 3 GHz. The  
maximum power added efficiency is 71.5 % which makes  
the TGF2954 appropriate for high efficiency applications.  
Ordering Information  
Part ECCN  
TGF2954  
Lead-free and RoHS compliant.  
Description  
3A001b.3.b 27 Watt GaN HEMT  
Datasheet: Rev A 10-20-14  
Disclaimer: Subject to change without notice  
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© 2014 TriQuint  
www.triquint.com  

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