Datasheet > TGF2952_15

TGF2952_15

更新时间： 2024-11-10 01:18:59

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TRIQUINT		/
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描述
7 Watt Discrete Power GaN on SiC HEMT

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TGF2952_15 数据手册

TGF2952

7 Watt Discrete Power GaN on SiC HEMT

Applications

• Marine radar

• Satellite communications

• Point to point communications

• Military communications

• Broadband amplifiers

• High efficiency amplifiers

Product Features

Functional Block Diagram

• Frequency Range: DC - 14 GHz

• 38.4 dBm Nominal P_SATat 3 GHz

• 75.7% Maximum PAE at 3 GHz

• 20.4 dB Nominal Power Gain at 3 GHz

• Bias: V_D= 32 V, I_DQ= 25 mA

• Technology: TQGaN25 on SiC

• Chip Dimensions: 1.01 x 0.82 x 0.10 mm

General Description

Pad Configuration

The TriQuint TGF2952 is a discrete 1.25 mm GaN on

SiC HEMT which operates from DC-14 GHz. The

TGF2952 is designed using TriQuint’s proven TQGaN25

production process. This process features advanced

field plate techniques to optimize microwave power and

efficiency at high drain bias operating conditions.

Pad No.

Symbol

V_G/ RF IN

V_D/ RF OUT

Source / Ground

Backside

The TGF2952 typically provides 38.4 dBm of saturated

output power with power gain of 20.4 dB at 3 GHz. The

maximum power added efficiency is 75.7 % which makes

the TGF2952 appropriate for high efficiency applications.

Ordering Information

Part ECCN

Lead-free and RoHS compliant.

Description

7 Watt GaN HEMT

TGF2952

EAR99

Datasheet: Rev A 10-20-14

Disclaimer: Subject to change without notice

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