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TGF2929-FL PDF预览

TGF2929-FL

更新时间: 2024-11-10 01:10:47
品牌 Logo 应用领域
TRIQUINT /
页数 文件大小 规格书
21页 3160K
描述
100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor

TGF2929-FL 数据手册

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TGF2929-FL  
100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor  
Applications  
Military radar  
Civilian radar  
Professional and military radio communications  
Test instrumentation  
Wideband or narrowband amplifiers  
Jammers  
Product Features  
Functional Block Diagram  
Frequency: DC to 3.5 GHz  
Output Power (P3dB): 107 W at 3.5 GHz  
Linear Gain: > 14 dB at 3.5 GHz  
Typical PAE: > 50% at 3.5 GHz  
Operating Voltage: 28 V  
Low thermal resistance package  
General Description  
Pin Configuration  
The TriQuint TGF2929-FL is a 107 W (P3dB) discrete GaN  
on SiC HEMT which operates from DC to 3.5 GHz. The  
device is constructed with TriQuint’s proven TQGaN25HV  
process, which features advanced field plate techniques  
to optimize power and efficiency at high drain bias  
operating conditions. This optimization can potentially  
lower system costs in terms of fewer amplifier line-ups  
and lower thermal management costs.  
Pin No.  
1
Label  
VD / RF OUT  
VG / RF IN  
Source  
2
Flange  
Lead-free and ROHS compliant  
Evaluation boards are available upon request.  
Ordering Information  
Part  
ECCN  
Description  
Packaged part  
Flangeless  
TGF2929-FL  
EAR99  
3.1-3.5 GHz  
Evaluation Board  
TGF2929-FL-EVB1 EAR99  
Datasheet: Rev A - 12-11-14  
Disclaimer: Subject to change without notice  
- 1 of 21 -  
© 2014 TriQuint  
www.triquint.com  

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