Datasheet > TGF2929-FL-EVB1

TGF2929-FL-EVB1

更新时间： 2024-09-18 01:10:47

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
21页	3160K
描述
100W, 28V, DC â 3.5 GHz, GaN RF Power Transistor

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TGF2929-FL-EVB1 数据手册

TGF2929-FL

100W, 28V, DC – 3.5 GHz, GaN RF Power Transistor

Applications

• Military radar

• Civilian radar

• Professional and military radio communications

• Test instrumentation

• Wideband or narrowband amplifiers

• Jammers

Product Features

Functional Block Diagram

• Frequency: DC to 3.5 GHz

• Output Power (P_3dB): 107 W at 3.5 GHz

• Linear Gain: > 14 dB at 3.5 GHz

• Typical PAE: > 50% at 3.5 GHz

• Operating Voltage: 28 V

• Low thermal resistance package

General Description

Pin Configuration

The TriQuint TGF2929-FL is a 107 W (P_3dB) discrete GaN

on SiC HEMT which operates from DC to 3.5 GHz. The

device is constructed with TriQuint’s proven TQGaN25HV

process, which features advanced field plate techniques

to optimize power and efficiency at high drain bias

operating conditions. This optimization can potentially

lower system costs in terms of fewer amplifier line-ups

and lower thermal management costs.

Pin No.

Label

V_D/ RF OUT

V_G/ RF IN

Source

Flange

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Ordering Information

Part

ECCN

Description

Packaged part

Flangeless

TGF2929-FL

EAR99

3.1-3.5 GHz

Evaluation Board

TGF2929-FL-EVB1 EAR99

Datasheet: Rev A - 12-11-14

Disclaimer: Subject to change without notice

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