Datasheet > TGF2160_15

TGF2160_15

更新时间： 2024-11-08 01:18:59

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TRIQUINT		/
页数	文件大小	规格书
6页	225K
描述
1600um Discrete GaAs pHEMT

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TGF2160_15 数据手册

TGF2160

1600um Discrete GaAs pHEMT

Applications

 Defense & Aerospace

 High-Reliability

 Test and Measurement

 Commercial

 Broadband Wireless

Product Features

Functional Block Diagram

 Frequency Range: DC - 20 GHz

 32.5 dBm Typical Output Power - P1dB

 10.4 dB Typical Gain @ 12 GHz

 63% Typical PAE @ 12 GHz

 No Vias

 Technology: 0.25 um GaAs pHEMT

 Chip Dimensions: 0.41 x 0.54 x 0.10 mm

General Description

Pad Configuration

The TriQuint TGF2160 is a discrete 1600-Micron pHEMT

which operates from DC to 20 GHz. The TGF2160 is

designed using TriQuint’s proven standard 0.25um

power pHEMT production process. This process

features advanced techniques to optimize microwave

power and efficiency at high drain bias operating

conditions.

Pad Dimensions Terminals

G (71um X 71um)

D (71um X 71um)

S (96um X 71um)

S (96um X 106um)

Gate

Drain

Source (outermost)

Source (center)

The TGF2160 typically provides 32.5 dBm of output

power at P1dB with gain of 10.4 dB and 63% power-

added efficiency at

dB compression.

This

performance makes the TGF2160 appropriate for high

efficiency applications. The protective overcoat layer

with silicon nitride provides a level of environmental

robustness and scratch protection.

Ordering Information

Part

TGF2160

ECCN

EAR99

Description

1600um GaAs pHEMT

Lead-free and RoHS compliant.

Datasheet: Rev A 06-23-13

Disclaimer: Subject to change without notice

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