Datasheet > TGF2819-FL_15

TGF2819-FL_15

更新时间： 2024-09-18 01:10:51

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
21页	1399K
描述
100W Peak Power, 20W Average Power

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TGF2819-FL_15 数据手册

TGF2819-FL

100W Peak Power, 20W Average Power,

32V DC – 3.5 GHz, GaN RF Power Transistor

Applications

 Military radar

 Civilian radar

 Professional and military radio communications

 Test instrumentation

 Wideband or narrowband amplifiers

 Jammers

Product Features

Functional Block Diagram

 Frequency: DC to 3.5 GHz

 Output Power (P_3dB): 126 W Peak

(25 Watts Avg.) at 3.3 GHz

 Linear Gain: >14 dB at 3.3 GHz

 Typical PAE: > 58% at 3.3 GHz

 Operating Voltage: 32 V

 Low thermal resistance package

General Description

Pin Configuration

The TriQuint TGF2819-FL is a greater-than 100 W Peak

(20 W Avg.) (P_3dB) discrete GaN on SiC HEMT which

operates from DC to 3.5 GHz. The device is constructed

with TriQuint’s proven TQGaN25HV process, which

features advanced field plate techniques to optimize

power and efficiency at high drain bias operating

conditions. This optimization can potentially lower

system costs in terms of fewer amplifier line-ups and

lower thermal management costs.

Pin No.

Label

V_D/ RF OUT

V_G/ RF IN

Source

Flange

Lead-free and ROHS compliant

Evaluation boards are available upon request.

Ordering Information

Part

ECCN

Description

Packaged part

Flanged

TGF2819-FL

3A001.b.3.a

3.1-3.5 GHz

Evaluation Board

TGF2819-FS-EVB1 EAR99

Datasheet: Rev B- 03-03-15

Disclaimer: Subject to change without notice

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