Datasheet > TGF2120

TGF2120

更新时间： 2024-09-18 01:18:59

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
6页	212K
描述
1200um Discrete GaAs pHEMT

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TGF2120 数据手册

TGF2120

1200um Discrete GaAs pHEMT

Applications

 Defense & Aerospace

 High-Reliability

 Test and Measurement

 Commercial

 Broadband Wireless

Product Features

Functional Block Diagram

 Frequency Range: DC - 20 GHz

 31 dBm Typical Output Power - P1dB

 11 dB Typical Gain @ 12 GHz

 57% Typical PAE @ 12 GHz

 No Vias

 Technology: 0.25 um GaAs pHEMT

 Chip Dimensions: 0.41 x 0.54 x 0.10 mm

General Description

Pad Configuration

The TriQuint TGF2120 is a discrete 1200-Micron pHEMT

which operates from DC to 20 GHz. The TGF2120 is

designed using TriQuint’s proven standard 0.25um

power pHEMT production process. This process

features advanced techniques to optimize microwave

power and efficiency at high drain bias operating

conditions.

Pad Dimensions Terminals

G (71um X 71um)

D (71um X 71um)

S (113.8um X 71um)

Gate

Drain

Source (outermost)

S (113.8um X 106um) Source (center)

The TGF2120 typically provides 31 dBm of output power

at P1dB with gain of 11 dB and 57% power-added

efficiency at 1 dB compression. This performance

makes the TGF2120 appropriate for high efficiency

applications. The protective overcoat layer with silicon

nitride provides a level of environmental robustness and

scratch protection.

Ordering Information

Part

TGF2120

ECCN

EAR99

Description

1200um GaAs pHEMT

Lead-free and RoHS compliant.

Datasheet: Rev A 06-13-13

Disclaimer: Subject to change without notice

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