Datasheet > TGF2080

TGF2080

更新时间： 2024-09-18 01:18:59

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
6页	191K
描述
800um Discrete GaAs pHEMT

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TGF2080 数据手册

TGF2080

800um Discrete GaAs pHEMT

Applications

 Defense & Aerospace

 High-Reliability

 Test and Measurement

 Commercial

 Broadband Wireless

Product Features

Functional Block Diagram

 Frequency Range: DC - 20 GHz

 29.5 dBm Typical Output Power - P1dB

 11.5 dB Typical Gain @ 12 GHz

 56% Typical PAE @ 12 GHz

 No Vias

 Technology: 0.25 um GaAs pHEMT

 Chip Dimensions: 0.41 x 0.54 x 0.10 mm

General Description

Pad Configuration

The TriQuint TGF2080 is a discrete 800-Micron pHEMT

which operates from DC to 20 GHz. The TGF2080 is

designed using TriQuint’s proven standard 0.25um

power pHEMT production process. This process

features advanced techniques to optimize microwave

power and efficiency at high drain bias operating

conditions.

Pad Dimensions Terminals

G (71um X 71um)

D (71um X 71um)

S (121um X 71um)

S (121um X 96um)

Gate

Drain

Source (outermost)

Source (center)

The TGF2080 typically provides 29.5 dBm of output

power at P1dB with gain of 11.5 dB and 56% power-

added efficiency at

dB compression.

This

performance makes the TGF2080 appropriate for high

efficiency applications. The protective overcoat layer

with silicon nitride provides a level of environmental

robustness and scratch protection.

Ordering Information

Part

TGF2080

ECCN

EAR99

Description

800um GaAs pHEMT

Lead-free and RoHS compliant.

Datasheet: Rev B 06-26-13

Disclaimer: Subject to change without notice

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