Datasheet > TGF2023-2-20_15

TGF2023-2-20_15

更新时间： 2024-09-18 01:20:19

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
14页	1458K
描述
90 Watt Discrete Power GaN on SiC HEMT

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TGF2023-2-20_15 数据手册

TGF2023-2-20

90 Watt Discrete Power GaN on SiC HEMT

Applications

• Defense & Aerospace

• Broadband Wireless

Product Features

Functional Block Diagram

• Frequency Range: DC - 18 GHz

• 50.5 dBm Nominal P_SATat 3 GHz

• 70.5% Maximum PAE

• 19.2 dB Nominal Power Gain at 3 GHz

• Bias: V_D= 12 - 32 V, I_DQ= 400 - 2000 mA

• Technology: TQGaN25 on SiC

• Chip Dimensions: 0.82 x 4.56 x 0.10 mm

General Description

Pad Configuration

The TriQuint TGF2023-2-20 is a discrete 20 mm GaN

on SiC HEMT which operates from DC-18 GHz. The

TGF2023-2-20 is designed using TriQuint’s proven

TQGaN25 production process. This process features

advanced field plate techniques to optimize microwave

power and efficiency at high drain bias operating

conditions.

Pad No.

1-16

Symbol

V_G/ RF IN

V_D/ RF OUT

Source / Ground

Backside

The TGF2023-2-20 typically provides 50.5 dBm of

saturated output power with power gain of 19.2 dB at

3 GHz. The maximum power added efficiency is

70.5 % which makes the TGF2023-2-20 appropriate for

high efficiency applications.

Ordering Information

Part ECCN

TGF2023-2-20

Description

3A001b.3.b 90 Watt GaN HEMT

Lead-free and RoHS compliant

Datasheet: Rev C 09-27-13

Disclaimer: Subject to change without notice

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