Datasheet > TGF2023-2-01

TGF2023-2-01

更新时间： 2024-09-18 01:20:19

品牌	Logo	应用领域
TRIQUINT		放大器晶体管
页数	文件大小	规格书
22页	2258K
描述
6 Watt Discrete Power GaN on SiC HEMT

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TGF2023-2-01 数据手册

TGF2023-2-01

6 Watt Discrete Power GaN on SiC HEMT

Applications

• Defense & Aerospace

• Broadband Wireless

Product Features

Functional Block Diagram

• Frequency Range: DC - 18 GHz

• 38 dBm Nominal P_SATat 3 GHz

• 71.6% Maximum PAE

• 18 dB Nominal Power Gain at 3 GHz

• Bias: V_D= 12 - 32 V, I_DQ= 25 - 125 mA

• Technology: TQGaN25 on SiC

• Chip Dimensions: 0.82 x 0.66 x 0.10 mm

General Description

Pad Configuration

The TriQuint TGF2023-2-01 is a discrete 1.25 mm GaN

on SiC HEMT which operates from DC-18 GHz. The

TGF2023-2-01 is designed using TriQuint’s proven

TQGaN25 production process. This process features

advanced field plate techniques to optimize microwave

power and efficiency at high drain bias operating

conditions.

Pad No.

Symbol

V_G/ RF IN

V_D/ RF OUT

Source / Ground

Backside

The TGF2023-2-01 typically provides 37.7 dBm of

saturated output power with power gain of 20.7 dB at

3 GHz. The maximum power added efficiency is

71.6 % which makes the TGF2023-2-01 appropriate for

high efficiency applications.

Lead-free and RoHS compliant

Ordering Information

Part ECCN Description

TGF2023-2-01

EAR99

6 Watt GaN HEMT

Datasheet: Rev C 09-27-13

Disclaimer: Subject to change without notice

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TGF2023-2-10	TRIQUINT	获取价格	50 Watt Discrete Power GaN on SiC HEMT
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TGF2023-2-20	TRIQUINT	获取价格	90 Watt Discrete Power GaN on SiC HEMT
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