Datasheet > TGF2023-2-02

TGF2023-2-02

更新时间： 2024-09-18 01:20:19

品牌	Logo	应用领域
TRIQUINT		放大器晶体管
页数	文件大小	规格书
14页	1891K
描述
12 Watt Discrete Power GaN on SiC HEMT

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TGF2023-2-02 数据手册

TGF2023-2-02

12 Watt Discrete Power GaN on SiC HEMT

Applications

• Defense & Aerospace

• Broadband Wireless

Product Features

Functional Block Diagram

• Frequency Range: DC - 18 GHz

• 40.1 dBm Nominal P_SATat 3 GHz

• 73.3% Maximum PAE

• 21 dB Nominal Power Gain at 3 GHz

• Bias: V_D= 12 - 32 V, I_DQ= 50 - 250 mA

• Technology: TQGaN25 on SiC

• Chip Dimensions: 0.82 x 0.92 x 0.10 mm

General Description

Pad Configuration

The TriQuint TGF2023-2-02 is a discrete 2.5 mm GaN

on SiC HEMT which operates from DC-18 GHz. The

TGF2023-2-02 is designed using TriQuint’s proven

TQGaN25 production process. This process features

advanced field plate techniques to optimize microwave

power and efficiency at high drain bias operating

conditions.

Pad No.

1-2

Symbol

V_G/ RF IN

V_D/ RF OUT

Source / Ground

Backside

The TGF2023-2-02 typically provides 40.1 dBm of

saturated output power with power gain of 21 dB at

3 GHz. The maximum power added efficiency is

73.3 % which makes the TGF2023-2-02 appropriate for

high efficiency applications.

Lead-free and RoHS compliant

Ordering Information

Part ECCN Description

TGF2023-2-02

EAR99

12 Watt GaN HEMT

Datasheet: Rev C 09-27-13

Disclaimer: Subject to change without notice

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与TGF2023-2-02相关器件

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TGF2023-2-02_15	TRIQUINT	获取价格	12 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-05	TRIQUINT	获取价格	25 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-05_15	TRIQUINT	获取价格	25 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-10	TRIQUINT	获取价格	50 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-10_15	TRIQUINT	获取价格	50 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-20	TRIQUINT	获取价格	90 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-20_15	TRIQUINT	获取价格	90 Watt Discrete Power GaN on SiC HEMT
TGF2025	TRIQUINT	获取价格	250 um Discrete GaAs pHEMT
TGF2025_15	TRIQUINT	获取价格	250 um Discrete GaAs pHEMT
TGF2040	TRIQUINT	获取价格	400 um Discrete GaAs pHEMT