Datasheet > TGF2023-2-05

TGF2023-2-05

更新时间： 2024-09-18 01:20:19

品牌	Logo	应用领域
TRIQUINT		放大器晶体管
页数	文件大小	规格书
19页	2928K
描述
25 Watt Discrete Power GaN on SiC HEMT

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TGF2023-2-05 数据手册

TGF2023-2-05

25 Watt Discrete Power GaN on SiC HEMT

Applications

• Defense & Aerospace

• Broadband Wireless

Product Features

Functional Block Diagram

• Frequency Range: DC - 18 GHz

• 43 dBm Nominal P_SATat 3 GHz

• 78.3% Maximum PAE

• 18 dB Nominal Power Gain at 3 GHz

• Bias: V_D= 12 - 32 V, I_DQ= 100 - 500 mA

• Technology: TQGaN25 on SiC

• Chip Dimensions: 0.82 x 1.44 x 0.10 mm

General Description

Pad Configuration

The TriQuint TGF2023-2-05 is a discrete 5 mm GaN on

SiC HEMT which operates from DC-18 GHz. The

TGF2023-2-05 is designed using TriQuint’s proven

TQGaN25 production process. This process features

advanced field plate techniques to optimize microwave

power and efficiency at high drain bias operating

conditions.

Pad No.

1-4

Symbol

V_G/ RF IN

V_D/ RF OUT

Source / Ground

Backside

The TGF2023-2-05 typically provides 43.0 dBm of

saturated output power with power gain of 18 dB at

3 GHz. The maximum power added efficiency is

78.3 % which makes the TGF2023-2-05 appropriate for

high efficiency applications.

Ordering Information

Part ECCN Description

Lead-free and RoHS compliant

TGF2023-2-05

3A001b.3.b 25 Watt GaN HEMT

Datasheet: Rev C 9-27-13

Disclaimer: Subject to change without notice

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