Datasheet > TGF2023-10

TGF2023-10

更新时间： 2024-09-17 06:01:43

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
7页	220K
描述
50 Watt Discrete Power GaN on SiC HEMT

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TGF2023-10 数据手册

TGF2023-10

50 Watt Discrete Power GaN on SiC HEMT

Key Features

•

Frequency Range: DC - 18 GHz

> 47 dBm Nominal Psat

55% Maximum PAE

15 dB Nominal Power Gain

Bias: Vd = 28 - 40 V, Idq = 1 A, Vg = -3 V Typical

Technology: 0.25 um Power GaN on SiC

Chip Dimensions: 0.82 x 2.48 x 0.10 mm

Primary Applications

•

Space

Military

Broadband Wireless

Measured Performance

Bias conditions: Vd = 28 - 40 V, Idq = 1 A, Vg = -3 V Typical

Product Description

The TriQuint TGF2023-10 is a discrete 10 mm

GaN on SiC HEMT which operates from DC-18

GHz. The TGF2023-10 is designed using

TriQuint’s proven 0.25um GaN production process.

This process features advanced field plate

techniques to optimize microwave power and

efficiency at high drain bias operating conditions.

The TGF2023-10 typically provides > 47 dBm of

saturated output power with power gain of 15 dB.

The maximum power added efficiency is 55%

which makes the TGF2023-10 appropriate for high

efficiency applications.

Lead-free and RoHS compliant

Datasheet subject to change without notice.

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

Dec 2008 © Rev A

12 3 4 5 6 7

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