Datasheet > TGF2022-60

TGF2022-60

更新时间： 2024-09-17 03:27:55

品牌	Logo	应用领域
TRIQUINT		/
页数	文件大小	规格书
8页	150K
描述
DC - 20 GHz Discrete power pHEMT

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TGF2022-60 数据手册

Advance Product Information

September 19, 2005

DC - 20 GHz Discrete power pHEMT

TGF2022-60

Key Features and Performance

•

Frequency Range: DC - 20 GHz

> 38 dBm Nominal Psat

57% Maximum PAE

12 dB Nominal Power Gain

Suitable for high reliability applications

6.0mm x 0.35um Power pHEMT

Nominal Bias Vd = 8-12V, Idq = 448-752mA

(Under RF Drive, Id rises from 448mA to 1480mA)

•

Chip Dimensions: 0.57 x 2.93 x 0.10 mm

(0.022 x 0.115 x 0.004 in)

Product Description

Primary Applications

The TriQuint TGF2022-60 is a discrete

6.0 mm pHEMT which operates from

DC-20 GHz. The TGF2022-60 is

designed using TriQuint’s proven

standard 0.35um power pHEMT

production process.

•

Point-to-point Radio

High-reliability space

Military

Base Stations

Broadband Wireless Applications

The TGF2022-60 typically provides

> 38 dBm of saturated output power

with power gain of 12 dB. The The

maximum power added efficiency is

57% which makes the TGF2022-60

appropriate for high efficiency

applications.

MSG

MAG

The TGF2022-60 is also ideally suited

for Point-to-point Radio, High-reliability

space, and Military applications.

The TGF2022-60 has a protective

surface passivation layer providing

environmental robustness.

Frequency (GHz)

Lead-free and RoHS compliant

Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to

change without notice.

TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com

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