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TC55VBM316ATGN55 PDF预览

TC55VBM316ATGN55

更新时间： 2024-09-19 21:04:43
品牌 Logo 应用领域
东芝 - TOSHIBA 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
15页 209K
描述
IC 512K X 16 STANDARD SRAM, 70 ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48, Static RAM

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TC55VBM316ATGN55 技术参数

生命周期：Obsolete零件包装代码：TSOP1
包装说明：TSOP1,针数：48
Reach Compliance Code：unknownECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.84
最长访问时间：70 ns备用内存宽度：8
JESD-30 代码：R-PDSO-G48长度：18.4 mm
内存密度：8388608 bit内存集成电路类型：STANDARD SRAM
内存宽度：16功能数量：1
端子数量：48字数：524288 words
字数代码：512000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：512KX16封装主体材料：PLASTIC/EPOXY
封装代码：TSOP1封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：260认证状态：Not Qualified
座面最大高度：1.2 mm最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.3 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：12 mm
Base Number Matches：1

TC55VBM316ATGN55 数据手册

 浏览型号TC55VBM316ATGN55的Datasheet PDF文件第2页浏览型号TC55VBM316ATGN55的Datasheet PDF文件第3页浏览型号TC55VBM316ATGN55的Datasheet PDF文件第4页浏览型号TC55VBM316ATGN55的Datasheet PDF文件第5页浏览型号TC55VBM316ATGN55的Datasheet PDF文件第6页浏览型号TC55VBM316ATGN55的Datasheet PDF文件第7页 
TC55VBM316ATGN/ASGN40,55  
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS  
524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM  
DESCRIPTION  
The TC55VBM316ATGN/ASGN is a 8,388,608-bit static random access memory (SRAM) organized as 524,288  
words by 16 bits/1,048,576 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this  
device operates from a single 2.3 to 3.6 V power supply. Advanced circuit technology provides both high speed and  
low power at an operating current of 3 mA/MHz and a minimum cycle time of 40 ns. It is automatically placed in  
low-power mode at 0.7 µA standby current (at VDD = 3 V, Ta = 25°C, typical) when chip enable (CE1 ) is asserted  
high or (CE2) is asserted low. There are three control inputs. CE1 and CE2 are used to select the device and for  
data retention control, and output enable (OE ) provides fast memory access. Data byte control pin ( LB , UB )  
provides lower and upper byte access. This device is well suited to various microprocessor system applications  
where high speed, low power and battery backup are required. And, with a guaranteed operating extreme  
temperature range of −40° to 85°C, the TC55VBM316ATGN/ASGN can be used in environments exhibiting extreme  
temperature conditions. The TC55VBM316ATGN/ASGN is available in a plastic 48-pin thin-small-outline package  
(TSOP).  
FEATURES  
•
Access Times (maximum):  
TC55VBM316ATGN/ASGN  
•
Low-power dissipation  
Operating: 9 mW/MHz (typical)  
•
•
•
•
•
•
Single power supply voltage of 2.3 to 3.6 V  
Power down features usingCE1 and CE2  
Data retention supply voltage of 1.5 to 3.6 V  
Direct TTL compatibility for all inputs and outputs  
Wide operating temperature range of −40° to 85°C  
Standby Current (maximum):  
40  
55  
Access Time  
40 ns  
40 ns  
40 ns  
25 ns  
55 ns  
55 ns  
55 ns  
30 ns  
CE1 Access Time  
CE2 Access Time  
OE Access Time  
3.6 V  
3.0 V  
10 µA  
5 µA  
•
Package:  
TSOPⅠ48-P-1220-0.50 (ATGN) (Weight:  
TSOPⅠ48-P-1214-0.50 (ASGN) (Weight:  
g typ)  
g typ)  
PIN ASSIGNMENT (TOP VIEW)  
PIN NAMES  
48 PIN TSOP  
A0~A18  
A-1~A18  
CE1 , CE2  
R/W  
Address Inputs (Word Mode)  
Address Inputs (Byte Mode)  
Chip Enable  
1
48  
25  
Read/Write Control  
Output Enable  
OE  
LB , UB  
Data Byte Control  
I/O1~I/O16 Data Inputs/Outputs  
24  
BYTE  
Byte (×8 mode) Enable  
Power  
(Normal)  
V
DD  
GND  
NC  
Ground  
No Connection  
Option  
OP*  
*: OP pin must be open or connected to GND.  
Pin No.  
Pin Name  
Pin No.  
1
2
3
4
5
6
7
8
9
10  
NC R/W CE2 OP  
26 27 28 29  
CE1 GND OE  
42 43 44  
11  
12  
13  
14  
UB  
30  
15  
LB  
31  
16  
A18  
32  
A15 A14 A13 A12 A11 A10  
A9  
23  
A2  
39  
A8  
24  
A1  
40  
NC  
25  
A0  
41  
17  
A17  
33  
18  
A7  
34  
19  
A6  
35  
20  
A5  
36  
21  
A4  
37  
22  
A3  
38  
Pin Name  
Pin No.  
I/O1 I/O9 I/O2 I/O10  
45  
46  
47  
48  
I/O16  
/A-1  
Pin Name  
I/O3 I/O11 I/O4 I/O12  
V
I/O5 I/O13 I/O6 I/O14 I/O7 I/O15 I/O8  
GND  
A16  
BYTE  
DD  
2002-05-14 1/15  
1234567...15

中文翻译

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 		TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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