Datasheet > STW56N60M2-4

STW56N60M2-4

更新时间： 2023-12-20 18:44:51

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	409K
描述
N沟道600 V、0.045 Ohm典型值、52 A MDmesh M2功率MOSFET，TO247-4封装

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

STW56N60M2-4 数据手册

STW56N60M2-4

Electrical characteristics

T_C= 25 °C unless otherwise specified.

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

600

Typ. Max. Unit

= 0 V, I = 1 mA

Drain-source breakdown voltage

(BR)DSS

= 0 V, V = 600 V

Zero gate voltage drain current

µA

DSS

= 0 V, V = 600 V, T = 125 °C⁽¹⁾

100

= 0 V, V = ± 25 V

Gate-body leakage current

Gate threshold voltage

±10

μA

GSS

= V , I = 250 µA

GS(th)

DS(on)

= 10 V, I = 26 A

Static drain-source on-resistance

mΩ

1. Specified by design, not tested in production.

Table 5. Dynamic

Symbol

Parameter

Input capacitance

Test conditions

Min.

Typ. Max. Unit

iss

3750

175

6.6

Ω

oss

= 100 V, f = 1 MHz, V = 0 V

Output capacitance

rss

Reverse transfer capacitance

Equivalent output capacitance

Intrinsic gate resistance

Total gate charge

(1)

= 0 V, V = 0 to 480 V

740

4.7

o(er)

f = 1 MHz, open drain

= 480 V, I = 52 A, V = 0 to 10 V

Gate-source charge

13.5

(see Figure 14. Test circuit for gate

charge behavior)

Gate-drain charge

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as C

when V increases from 0

oss

to 80% V

DSS

Table 6. Switching times

Test conditions

Symbol

Parameter

Min.

Typ. Max. Unit

Turn-on delay time

Rise time

26.5

119

= 300 V, I = 26 A,

d(on)

= 4.7 Ω, V = 10 V

(see Figure 13. Switching times

test circuit for resistive load and

Figure 18. Switching time waveform)

Turn-off delay time

Fall time

d(off)

DS10508 - Rev 4

page 3/12

1 234 5 6 7...12

下载PDF

与STW56N60M2-4相关器件

型号	品牌	描述	获取价格	数据表
STW56N65DM2	STMICROELECTRONICS	N沟道650 V、0.058 Ohm典型值、48 A MDmesh DM2功率MOSFET	获取价格
STW56N65M2	STMICROELECTRONICS	N沟道650 V、0.049 Ohm典型值、49 A MDmesh M2功率MOSFET，	获取价格
STW56N65M2-4	STMICROELECTRONICS	N沟道650 V、0.049 Ohm典型值、49 A MDmesh M2功率MOSFET，	获取价格
STW56NM60N	STMICROELECTRONICS	N-channel 600 V, 0.05 Î©, 45 A TO-247 MDmeshâ	获取价格
STW57N65M5	STMICROELECTRONICS	N-channel 650 V, 0.056 Î© typ., 42 A MDmeshâ	获取价格
STW57N65M5-4	STMICROELECTRONICS	N-channel 650 V, 0.056 Î© typ., 42 A, MDmeshâ	获取价格